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1

Conference Presentation

Electron affinity and surface states of GaN m-plane facets: Implication for electronic selfpassivation

Ebert, Philipp
2019

2

Conference Presentation

Resistive switching in optoelectronic III-V materials based on deep traps

Schnedler, Michael
2019

3

Conference Presentation

Dislocation bending in GaN/step-graded (Al,Ga)N/AIN buffer layers on Si(111) investigated by STM and STEM

Wang, Yuhan
2019

4

Journal Article

Resistive switching in optoelectronic III-V materials based on deep traps

Schnedler, M.
2018

Scientific reports, 8 (2018) 1, S. 9483

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5

Journal Article

Self-limited single nanowire systems combining all-in-one memristive and neuromorphic functionalities

Milano, Gianluca
2018

Nature Communications, 9 (2018) 1, S. 5151

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6

Journal Article

Dislocation bending in GaN/step-graded (Al,Ga)N/AlN buffer layers on Si(111) investigated by STM and STEM

Zhang, Lei
2018

The philosophical magazine, 98 (2018) 34, S. 3072 - 3085

7

Journal Article

Electron affinity and surface states of GaN m -plane facets: Implication for electronic self-passivation

Portz, V.
2018

Physical Review B Physical review / B, 97 97 (2018 2018) 11 11, S. 115433 115433

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8

Journal Article

Atomically Resolved Electronic States and Correlated Magnetic Order at Termination Engineered Complex Oxide Heterointerfaces

Huang, Bo-Chao
2018

ACS nano, 12 (2018) 2, S. 1089 - 1095

9

Journal Article

Anomalous Resistance Hysteresis in Oxide ReRAM: Oxygen Evolution and Reincorporation Revealed by In Situ TEM

Cooper, David
2017

Advanced materials, 29 (2017) 23, S. 1700212

10

Journal Article

Fermi-level pinning and intrinsic surface states of Al$_{1−x}$In$_{x}$N(101¯0) surfaces

Portz, V.
2017

Applied physics letters, 110 (2017) 2, S. 022104 -

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11

Journal Article

Probing defect states in polycrystalline GaN grown on Si(111) by sub-bandgap laser-excited scanning tunneling spectroscopy

Hsiao, F.-M.
2017

Journal of applied physics, 121 (2017) 1, S. 015701 -

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12

Journal Article

Importance of quantum correction for the quantitative simulation of photoexcited scanning tunneling spectra of semiconductor surfaces

Schnedler, M.
2016

Physical Review B Physical review / B, 93 93 (2016 2016) 19 19, S. 195444 195444

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13

Poster

Polarity Dependent Fermi Level Pinning on GaN m-Plane Surfaces

Schnedler, Michael
2016

14

Conference Presentation

Quantitative description of light-excited scanning tunneling spectroscopy

Schnedler, Michael
2016

15

Conference Presentation

Investigation of AlInN/GaN heterostructures by scanning Tunneling and Transmission electron microscopy

Portz, Verena
2016

16

Conference Presentation

How can band offsets in III-V nanowires be determined correctly by scanning tunneling spectroscopy?

Ebert, Philipp
2016

17

Journal Article

Lazarevicite-type short-range ordering in ternary III-V nanowires

Schnedler, M.
2016

Physical Review B Physical review / B, 94 94 (2016 2016) 19 19, S. 195306 195306

OpenAccess OpenAccess

18

Poster

Quantitative description of photo-excited scanning tunneling spectroscopy

Schnedler, Michael
2016

19

Journal Article

Strain and compositional fluctuations in Al$_{0.81}$In$_{0.19}$N/GaN heterostructures

Portz, V.
2016

Applied physics letters, 109 (2016) 13, S. 132102 -

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20

Journal Article

Tracking the subsurface path of dislocations in GaN using scanning tunneling microscopy

Weidlich, P. H.
2015

Journal of applied physics, 118 (2015) 3, S. 035302 -

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