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Frontiers of charge based Electronics
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Journal Article
Advanced high-k gate dielectric amorphous LaGdO3 gated metal-oxide-semiconductor devices with sub-nanometer equivalent oxide thickness
Pavunny, S. P.
2013
Applied physics letters, 102 19, S. 192904 -
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Katiyar, R. S.
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Kumar, A.
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Misra, P.
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Pavunny, S. P.
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Schubert, Jürgen
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Frontiers of charge based Electronics
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Halbleiter-Nanoelektronik; PGI-9
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