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1

Journal Article

Influence of growth temperature on the selective area MOVPE of InAs nanowires on GaAs (111) B using N2 carrier gas

Akabori, M.
2009

Journal of crystal growth, 311 (2009) S. 3813 - 3816

2

Contribution to a book
Contribution to a conference proceedings

Low Frequency Noise in 2DEG Channel of AlGaN/GaN Heterostructures Scaled to Nanosize Width

Vitusevich, S. A.
2009

3

Journal Article

Mechanism of strain relaxation by twisted nanocolumns revealed in AlGaN/GaN heterostructures

Kladko, V.P.
2009

Applied physics letters, 95 (2009) S. 031907

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4

Talk (non-conference)

Comparison of growth behavior for undoped and Si-doped GaAs and InAs nanowires deposited by selective area MOVPE

Sladek, K.
2009

5

Influence of silicon doping on the SA-MOVPE of InAs nanowires

Penz, A.
2009

6

MOVPE growth and characterization of dopes GaAs/AlGaAs core-shell nanowires

Sladek, K.
2009

7

Catalyst free MOVPE of GaAs- and InAs-BAsed Nanowires in N2 atmosphere

Sladek, K.
2009

8

Contribution to a book

Low frequency noise in 2DEG channel of AlGaN/GaN heterostructures scaled to nanosize width

Vitusevich, S. A.
2009

9

Journal Article

Internal strains and crystal structure of the layers in AlGaN/GaN heterostructures grown on sapphire substrate

Kladko, V.P.
2009

Journal of applied physics, 105 (2009) S. 063515-1-9

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10

Journal Article

Quantum confinement effect on the effective mass in two-dimensional electron gas of AlGaN/GaN heterostructures

Kurakin, A. M.
2009

Journal of applied physics, 105 (2009) S. 073703

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11

Journal Article

Spin-orbit coupling in GaxIn1-xAs/InP two-dimensional electron gases and quantum wire structures

Schäpers, T.
2009

Semiconductor science and technology, 24 (2009) S. 064001

12

Talk (non-conference)

Anisotropy of two-dimensional electron mobilities in InP/InGaAs/InP(001)

Akabori, M.
2009

13

Talk (non-conference)

Anisotropy of two-dimensional electron mobilities in InP/InGaAs

Akabori, M.
2009

14

Talk (non-conference)

Strain-enhanced electron mobility anisotropy and piezoelectric scattering in InGaAs/InP 2DEGs

Akabori, M.
2009

15

Talk (non-conference)

Anisotropic electron transport of two-dimensional electron gases in compressively-strained, lattice-matched, and tensilely-strained InGaAs on InP(001)

Akabori, M.
2009

16

Journal Article

g-factor and exchange energy in a few-electron lateral InGaAs quantum dot

Larsson, M.
2009

Applied physics letters, 95 (2009) S. 192112

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17

Journal Article

Electronic transport in mesoscopic superconductor/2D electron gas junctions in strong magnetic field

Batov, I. E.
2009

Bulletin of the Russian Academy of Sciences / Physics, 73 (2009) S. 880 - 882

18

Electronic transport in InAs nanowires controlled by high-k dielectric gates

Weis, K.
2009

19

Journal Article

Gate-defined quantum-dot devices realized in InGaAs/InP by incorporating a HfO2 layer as gate dielectric

Sun, J.
2009

Applied physics letters, 94 (2009) S. 042114

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