JuLib | Articles & more - {"Hartmann, S."}

1

Journal Article

Impact of strain and Ge concentration on the performance pf planar SiGe band-to-band-tunneling transistors

Schmidt, M.
2012

Solid state electronics, 71 (2012) S. 42 - 47

“...Hartmann, J.-M....”

2

Journal Article

Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source

Zhao, Q.T.
2012

Solid state electronics, 74 (2012) S. 97-101

“...Hartmann, J.-M....”

3

Journal Article

Hole Transport in Strained Si0.5Ge0.5 QW-MOSFETs with <110> and <100> Channel Orientations

Minamisawa, R.A.
2012

IEEE electron device letters, 33 (2012) S. 1105 - 1107

“...Hartmann, J.-M....”

4

Journal Article

Hole Mobilities of Si/Si0.5Ge0.5 Quantum-Well Transistor on SOI and Strained SOI

Yu, W.
2012

IEEE electron device letters, 33 (2012) S. 758 - 760

“...Hartmann, J.-M....”

5

Journal Article

p-Type Ion Implantation in Tensile Si/Compressive Si0.5Ge0.5/Tensile Strained Si Heterostructures

Minamisawa, R.A.
2012

Journal of the Electrochemical Society, 159 (2012) S. H44 - H51

“...Hartmann, J.M....”

6

Conference Presentation

Ultrathin epitaxial Ni-silicide contacs on Si and SiGe: Structural and electrical investigation

Zhao, Q.T.
2012

“...Hartmann, J.-M....”

7

Contribution to a book
Contribution to a conference proceedings

Si/SiGe Hetero-Structure Tunneling Field Effect Transistors with In-Situ Doped SiGe Source

Schmidt, M.
2012

“...Hartmann, J.-M....”

8

Contribution to a book
Contribution to a conference proceedings

Ultrathin epitaxial Ni-silicide contacts on Si and SiGe: Structural and electrical investigation

Zhao, Q.T.
2012

“...Hartmann, J.-M....”

9

Conference Presentation

Impact of strain and Ge concentration on the performance of planar SiGe band-to-band-tunneling transistors

Schmidt, M.
2011

“...Hartmann, J.M....”

10

Journal Article

Epitaxial growth of Ni(Al)Si0.7Ge0.3 on Si0.7Ge0.3/Si(100) by Al interlayer mediated epitaxy

Zhang, B.
2011

Applied physics letters, 98 (2011) S. 252101

“...Hartmann, J.M....”
Get full text Published under German "Allianz" Licensing conditions on 2011-06-20. Available in OpenAccess from 2011-06-20

11

Contribution to a book
Contribution to a conference proceedings

Impact of strain and Ge concentration on the performance of planar SiGe band-to-band-tunneling transistors

Schmidt, M.
2011

“...Hartmann, J.-M....”

12

Contribution to a book
Contribution to a conference proceedings

Thermal Stability and Interface Improvement of Thin NiSiGe by C+ ion implantation

Zhang, B.
2011

“...Hartmann, J.M....”

13

Journal Article

Improved NiSi0.8Ge0.2/Si0.8Ge0.2 Contacs by C+ Pre-Implantation

Zhang, B.
2011

Electrochemical and solid-state letters, 14 (2011) S. H261-H263

“...Hartmann, J.M....”

14

Journal Article

High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate

Yu, W.
2011

Solid state electronics, 62 (2011) 1, S. 185 - 188

“...Hartmann, J.M....”

15

Journal Article

Relaxation behavior study of ultra-small superparamagnetic iron oxide nanoparticles at ultra-low and ultra-high magnetic fields

Wang, W.
2011

The @journal of physical chemistry / B, 115 (2011) S. 14789 - 14793

“...Hartmann, R....”

16

Journal Article

High mobility strained Si(0.5)Ge(0.5)/SSOI short channel field effect transistors with TiN/GdScO(3) gate stack

Minamisawa, R.A.
2011

Microelectronic engineering, 88 (2011) S. 2955 - 2958

“...Hartmann, J.M....”

17

Conference Presentation

Tunneling Field-Effect Transistor with a Strained Si Channel and a Si0.5Ge0.5 Source

Zhao, Q.T.
2011

“...Hartmann, J.M....”

18

Contribution to a book
Contribution to a conference proceedings

Tunneling Field-Effect Transistor with a Strained Si Channel and a Si0.5Ge0.5 Source

Zhao, Q.T.
2011

“...Hartmann, J.M....”

19

Journal Article

An Improved Si tunnel Field Effect Transistor with a Buried Strained Si1-xGex Source

Zhao, Q.T.
2011

IEEE Electron Device Letters, 32 (2011) S. 1480 - 1482

“...Hartmann, J.M....”

20

Conference Presentation

Strained-SiGe p-MOSFET with LaLuO3 as high-k gate dielectric and TiN as metal gate

Yu, W.
2010

“...Hartmann, J.M....”

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