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Halbleiter-Nanoelektronik; PGI-9
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1
Journal Article
A Steep-Slope Transistor Combining Phase-Change and Band-to-Band-Tunneling to Achieve a sub-Unity Body Factor
Vitale, Wolfgang A.
2017
Scientific reports, 7 (2017) 1, S. 355
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2
Contribution to a conference proceedings
(Si)GeSn nanostructures for light emitters
Rainko, D.
2016
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3
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Strained Silicon-Germanium/Silicon Heterostructure Tunnel FETs for Low Power Applications
Blaeser, Sebastian
2016
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4
Journal Article
Advanced high-k gate dielectric amorphous LaGdO3 gated metal-oxide-semiconductor devices with sub-nanometer equivalent oxide thickness
Pavunny, S. P.
2013
Applied physics letters, 102 19, S. 192904 -
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5
Conference Presentation
Growth of graded doped Si/SiGe Heterostructure Tunnel FET
Wirths, S.
2013
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Name
Mantl, Siegfried
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Blaeser, Sebastian
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Buca, Dan Mihai
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Mussler, Gregor
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Alper, Cem
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Biswas, A.
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Biswas, Arnab
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Casu, Emanuele A.
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Hartmann, J. M.
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Holländer, Bernhard
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Ikonic, Z.
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Ionescu, A. M.
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Kumar, A.
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Luong, Gia V.
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Luysberg, Martina
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Rosca, Teodor
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Schubert, Jürgen
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Research Program
Controlling Electron Charge-Based Phenomena
2
Frontiers of charge based Electronics
2
Addenda
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Contributing Institute
Halbleiter-Nanoelektronik; PGI-9
Analytik; ZEA-3
1
JARA-FIT; JARA-FIT
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Mikrostrukturforschung; PGI-5
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