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1

Journal Article

Properties of the two-dimensional electron gas in modulation-doped Galn As(P)/InP structures grown by low-pressure metalorganic vapor-phase epitaxy

Koch, F.
1989

Journal of applied physics, 66 2, S. 697-703

OpenAccess

2

Journal Article

Electronic structure of cleaved clean and oxygen-covered GaAs (110) surfaces

Matz, R.
1977

OpenAccess

3

Journal Article

A Raman study of Au/Te/Au/GaAs (100) ohmic contacts

Silverans, R. E.

Journal of applied physics, 71 (1992) 2, S. 739 - 743

OpenAccess

4

Journal Article

The effect of growth temperature on AlAs/GaAs resonant tunnelling diodes

Lüth, H.

Journal of physics / D, 27 (1994) S. 175 - 178

OpenAccess

5

Journal Article

Properties of the two-dimensional electron gas in modulation-doped Galn As(P)/InP structures grown by low-pressure metalorganic vapor-phase epitaxy

Koch, F.

Journal of applied physics, 66 (1989) S. 697 - 703

OpenAccess

6

Journal Article

Gas source molecular beam epitaxy of FeSi2/Si(l 11) heterostructures

Gerthsen, D.

Applied physics letters, 62 (1992) 18, S. 2271 - 2273

OpenAccess

7

Journal Article

Low- and high-field transport properties of pseudomorphic InxGa1-xAs/lnP (0.73 kleiner gleich x kleiner gleich 0.82) p-type modulation-doped single-quantum-well structures

Lüth, H.

Journal of applied physics, 75 (1994) 7, S. 3507 - 3515

OpenAccess

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