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1
Journal Article
Epitaxial growth of highly compressively strained GeSn alloys up to 12.5% Sn
Oehme, M.
2013
Journal of crystal growth, 384 (2013) S. 71 - 76
“
...Schulze,
J
....
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2
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Comparison of InAs nanowire conductivity: influence of growth method and structure
Sladek,
K
.
2011
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...Sladek,
K
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Poster
Comparison of InAs nanowire conductivity: influence of growth method and structure
Sladek,
K
.
2011
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...Sladek,
K
....
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3
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Contribution to a book
1
Contribution to a conference proceedings
1
Journal Article
1
Poster
1
Name
Grap, T.
2
Grützmacher, Detlev
2
Gül, Ö.
2
Hardtdegen, Hilde
2
Lenk, Steffi
2
Lysov, A.
2
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Lüth, H.
2
Prost, W.
2
Schäpers, Thomas
2
Sladek, K.
2
Weis, Karl
2
Winden, A.
2
Wirths, S.
2
von der Ahe, M.
2
Blömers, C.
1
Blömers, Ch.
1
Buca, Dan Mihai
1
Holländer, Bernhard
1
Kasper, E.
1
Kostecki, K.
1
Lepsa, M.
1
Lepsa, M.I.
1
Li, Z-A.
1
Li, Z.-A.
1
Oehme, M.
1
Schulze, J.
1
Tegude, F.-J.
1
Tegude, F.J.
1
Weirich, T.E.
1
Weirich, Th.
1
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Research Program
Grundlagen für zukünftige Informationstechnologien
2
Frontiers of charge based Electronics
1
Contributing Institute
Halbleiter-Nanoelektronik; PGI-9
3
JARA-FIT; JARA-FIT
3
Scientific Report
2011
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2013
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