JuLib | Articles & more - {"Controlling Electron Charge-Based Phenomena"}

Simulation of abrupt SET and gradual RESET behavior in variable HfO2/TiOx ReRAM cells

Bengel, C.
2019

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102

In-gap states and band-like transport in memristive devices

Bäumer, Christoph
2019

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103

Identifying surface reaction intermediates with photoemission tomography

Yang, Xiaosheng
2019

Nature Communications, 10 (2019) 1, S. 3189

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Select result number 104

104

Tuning the surface chemistry of epitaxial LaNiO3 electrocatalysts, Solid State Ionics

Bäumer, Christoph
2019

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105

Redox processes in complex oxide thin films for energy transformation and energy-efficient computing

Bäumer, Christoph
2019

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Select result number 106

106

Tuning the interface chemistry of electrocatalysts and memristive devices

Bäumer, Christoph
2019

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107

Surface (non-)stoichiometry in complex oxides for energy transformation and energy-efficient computing

Bäumer, Christoph
2019

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Select result number 108

108

Selektives MOVPE-Wachstum von lateralen In1-xGaxAs Nanostrukturen auf Silizium Substraten

Wierzkowski, Thorsten
2019

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Select result number 109

109

On the role of the metal oxide/reactive electrode interface during the forming procedure of valence change ReRAM devices

Kindsmüller, Andreas
2019

Nanoscale, 11 (2019) 39, S. 18201 - 18208

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110

Persistence of spin memory in a crystalline, insulating phase-change material

Reindl, Johannes
2019

npj quantum materials, 4 (2019) 1, S. 57

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Select result number 111

111

Redox-based memristive devices for new computing paradigm

Dittmann, R.
2019

APL materials, 7 (2019) 11, S. 110903 -

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Select result number 112

112

Investigation of Negative Capacitance and Junctionless MOSFETs for CMOS Scaling

Han, Qinghua
2019

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Select result number 113

113

Surface structures of tellurium on Si(111)–(7×7) studied by low-energy electron diffraction and scanning tunneling microscopy

Lüpke, Felix
2019

Surface science, 681 (2019) S. 130 - 133

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Select result number 114

114

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Dissertation / PhD Thesis

Si/SiGe-Based Gate-Normal Tunneling Field-Effect Transistors

Glass, Stefan
2019

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115

Group IV (Si)GeSn Light Emission and Lasing Studies

Stange, Daniela
2019

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116

Impact of tensile strain on low Sn content GeSn lasing

Rainko, Denis
2019

Scientific reports, 9 (2019) 1, S. 259

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117

Charge transport in GaAs nanowires: interplay between conductivity through the interior and surface conductivity

Korte, Stefan
2019

Journal of physics / Condensed matter Condensed matter, 31 (2019) 7, S. 074004 -

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Select result number 118

118

Mott-transition-based RRAM

Wang, Yue
2019

Materials today, 28 (2019) S. 63 - 80

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Select result number 119

119

High-k rare-earth oxides on GaN and ferroelectric properties of hafnia based thin films

Tromm, Thomas Carl Ulrich
2019

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Select result number 120

120