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Kondensierte Materie
Theorie III; IFF-TH-III
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Institut für Halbleiterschichten und Bauelemente; ISG-1
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Kondensierte Materie
Theorie III; IFF-TH-III
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Institut für Halbleiterschichten und Bauelemente; ISG-1
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Effect of helium ion implantation and annealing on the relaxation behaviour of pseudomorphic Si1-xGex/Si(100) buffer layers on Si (100) substrates
Luysberg, M.
2002
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Journal Article
Effect of helium ion implantation and annealing on the relaxation behaviour of pseudomorphic Si1-xGex/Si(100) buffer layers on Si (100) substrates
Luysberg, M.
2002
Journal of applied physics, 92 (2002) S. 4290 - 4295
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Theory of X-ray Diffraction from Partially Relaxed SiGe/Si Layers
Trinkaus, H.
2006
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Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
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