Diffusion barriers in semiconductor contact metallization.
silicon metallization by tungsten, titanium mitride
Saved in:
Personal Name(s): | Kattelus, H. |
---|---|
Imprint: |
Helsinki :
Teknillinen Korkeakoulu.
|
Physical Description: |
GETR. PAG. |
Note: |
englisch |
Series Title: |
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"name" and "number" keys or a flat string containing only the series
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Technical Research Centre of Finland publications ;
vol 0048. |
Classification: |
LEADER | 00810nam a2200229 n 4500 | ||
---|---|---|---|
001 | 124952 | ||
005 | 19970518000000.0 | ||
035 | |a (Sirsi) a111102 | ||
084 | 0 | |a FGMH - Metallization, physics of microelectronics |2 ZB | |
245 | 0 | 0 | |a Diffusion barriers in semiconductor contact metallization. |
260 | |a Helsinki : |b Teknillinen Korkeakoulu. | ||
300 | |a GETR. PAG. | ||
490 | 0 | |a Technical Research Centre of Finland publications ; |v vol 0048. | |
500 | |a englisch | ||
520 | |a silicon metallization by tungsten, titanium mitride | ||
596 | |a 1 | ||
700 | 1 | |a Kattelus, H. | |
710 | 2 | |a Teknillinen Korkeakoulu (Helsinki) | |
900 | |a S 005036-0048'01' | ||
908 | |a Hochschulschrift | ||
908 | |a Bericht, Gutachten | ||
949 | |a S 005036-0048'01' |w LC |c 1 |i 1088200321 |l STACKS |m ZB |r Y |s Y |t ZBHS |u 25/3/2009 |x ZB-F |1 PRINT |2 HS |