Electronic structure and properties of semiconductors.
Saved in:
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Table of Contents |
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| Personal Name(s): | Schröter, Wolfgang, editor |
| Imprint: |
Weinheim :
VCH Verl. Ges.,
1991.
|
| Physical Description: |
603 S. |
| Note: |
englisch |
| ISBN: |
0895736926 9780895736925 3527268170 9783527268177 |
| Series Title: |
Materials science and technology ;
4. |
| Keywords: |
band theory applied to semiconductors optical properties and charge transport of semiconductors intrinsic point defects in semiconductors deep centers in semiconductors equilibria, nonequilibria, diffusion, and precipitation in semiconductors dislocations in semiconductors grain boundaries in semiconductors interfaces in semiconductors the Hall effect in quantum wires material properties of hydrogenated amorphous silicon high temperature properties of 3d transition elements in silicon |
| Subject (ZB): | |
| Classification: | |
| Shelf Classification: |
| LEADER | 02141cam a2200481 n 4500 | ||
|---|---|---|---|
| 001 | 133777 | ||
| 005 | 20080618132100.0 | ||
| 008 | r1991 | ||
| 020 | |a 3527268170 | ||
| 020 | |a 0895736926 | ||
| 035 | |a (Sirsi) a118868 | ||
| 084 | 0 | |a FAF - Materials research - comprehensive works |2 ZB | |
| 084 | 0 | |a FJH - Semiconductor physics |2 ZB | |
| 084 | 0 | |a FJHB - Band structure and electronic transport in semiconductors |2 ZB | |
| 084 | 1 | |a FAF - Materialforschung - allgemeine Serien |2 LS | |
| 245 | 0 | 0 | |a Electronic structure and properties of semiconductors. |
| 260 | |a Weinheim : |b VCH Verl. Ges., |c 1991. | ||
| 300 | |a 603 S. | ||
| 490 | 0 | |a Materials science and technology ; |v 4. | |
| 500 | |a englisch | ||
| 596 | |a 1 26 135 | ||
| 650 | 4 | |a semiconductor physics | |
| 650 | 4 | |a physical properties | |
| 650 | 4 | |a electronic structure | |
| 653 | |a band theory applied to semiconductors | ||
| 653 | |a optical properties and charge transport of semiconductors | ||
| 653 | |a intrinsic point defects in semiconductors | ||
| 653 | |a deep centers in semiconductors | ||
| 653 | |a equilibria, nonequilibria, diffusion, and precipitation in semiconductors | ||
| 653 | |a dislocations in semiconductors | ||
| 653 | |a grain boundaries in semiconductors | ||
| 653 | |a interfaces in semiconductors | ||
| 653 | |a the Hall effect in quantum wires | ||
| 653 | |a material properties of hydrogenated amorphous silicon | ||
| 653 | |a high temperature properties of 3d transition elements in silicon | ||
| 700 | 1 | |a Schröter, Wolfgang, |e Hrsg. | |
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| 900 | |a FAF 001-04 | ||
| 908 | |a Monographie, Sammelwerk | ||
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