Photoinduced defects in semiconductors.
Saved in:
Personal Name(s): | Redfield, D. |
---|---|
Bube, R. H. | |
Imprint: |
Cambridge :
Cambridge University Pr.,
1996.
|
Physical Description: |
X, 217 S. |
Note: |
englisch |
ISBN: |
0521461960 9780521461962 |
Series Title: |
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"name" and "number" keys or a flat string containing only the series
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Cambridge studies in semiconductor physics and microelectronic engineering ;
4. |
Keywords: |
hydrogenated amorphous silicon |
Subject (ZB): | |
Classification: | |
Shelf Classification: |
LEADER | 01122cam a2200337 n 4500 | ||
---|---|---|---|
001 | 145344 | ||
005 | 19970715000000.0 | ||
008 | r1996 | ||
020 | |a 0521461960 | ||
035 | |a (Sirsi) a129136 | ||
084 | 0 | |a FJHE - Defects and radiation effects in semiconductors |2 ZB | |
084 | 1 | |a FJH - Halbleiterphysik |2 LS | |
245 | 0 | 0 | |a Photoinduced defects in semiconductors. |
260 | |a Cambridge : |b Cambridge University Pr., |c 1996. | ||
300 | |a X, 217 S. | ||
490 | 0 | |a Cambridge studies in semiconductor physics and microelectronic engineering ; |v 4. | |
500 | |a englisch | ||
596 | |a 1 | ||
650 | 4 | |a semiconductor | |
650 | 4 | |a photochemistry | |
650 | 4 | |a III - V semiconductor | |
650 | 4 | |a II - VI semiconductor | |
650 | 4 | |a amorphous semiconductor | |
650 | 4 | |a semiconductor device | |
653 | |a hydrogenated amorphous silicon | ||
700 | 1 | |a Redfield, D. | |
700 | 1 | |a Bube, R. H. | |
900 | |a S 007527-0004'01' | ||
900 | |a FJH 038 | ||
908 | |a Monographie, Sammelwerk | ||
949 | |a FJH 038 |w LC |c 1 |i 1096102990 |d 12/1/2021 |e 9/12/2020 |l STACKS |m ZB |n 5 |r Y |s Y |t ZBB |u 25/3/2009 |x ZB-F |1 PRINT |