International Conference on Indium Phosphide and Related Materials. 4 : (IPRM 4) : Newport, RI, 21. - 24.4.1992.
Indium phosphide and related materials :
Saved in:
Imprint: |
New-York, NY :
Institute of Electrical and Electronics Engineers,
1992.
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Physical Description: |
XX, 687 S. |
Note: |
englisch |
ISBN: |
9780780305304 0780305299 0780305310 0780305302 9780780305298 9780780305311 |
Series Title: |
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International Conference on Indium Phosphide and Related Materials ;
4. |
Subject (ZB): | |
Classification: |
LEADER | 02103cam a2200565 n 4500 | ||
---|---|---|---|
001 | 50960 | ||
005 | 20001221101000.0 | ||
008 | r1992 | ||
020 | |a 0780305302 | ||
020 | |a 0780305299 | ||
020 | |a 0780305310 | ||
035 | |a (Sirsi) a49357 | ||
084 | 0 | |a FJKC - III - V semiconductors |2 ZB | |
084 | 0 | |a FJLB - Physics of semiconductor devices |2 ZB | |
245 | 0 | 0 | |a International Conference on Indium Phosphide and Related Materials. |n 4 : |b (IPRM 4) : Newport, RI, 21. - 24.4.1992. |
260 | |a New-York, NY : |b Institute of Electrical and Electronics Engineers, |c 1992. | ||
300 | |a XX, 687 S. | ||
490 | 0 | |a International Conference on Indium Phosphide and Related Materials ; |v 4. | |
500 | |a englisch | ||
520 | |a Indium phosphide and related materials : | ||
520 | |a Hemt characteristics and performance | ||
520 | |a characterization technologies for inp- based materials | ||
520 | |a growth and doping | ||
520 | |a implantation and passivation | ||
520 | |a integration | ||
520 | |a epitaxy | ||
520 | |a solar cells | ||
520 | |a selective area epitaxy | ||
520 | |a FET fundamentals | ||
520 | |a advanced technologies | ||
520 | |a advanced detection | ||
520 | |a bulk inp crystal growth technology | ||
520 | |a chemical beam epitaxy | ||
520 | |a electron devices: processing | ||
520 | |a Hbt design and optimization | ||
520 | |a deposition and etching | ||
520 | |a Hbt characteristics and performance | ||
520 | |a lasers | ||
520 | |a growth technique and quantum wells | ||
520 | |a Hemt and hbt ic considerations | ||
520 | |a semiinsulating inp | ||
520 | |a strain and mismatch | ||
520 | |a dielectric and characterization | ||
596 | |a 1 | ||
650 | 4 | |a III - V semiconductor | |
650 | 4 | |a semiconductor device | |
711 | 2 | |a International Conference on Indium Phosphide and Related Materials |n 4 |d (1994 : |c Newport) | |
900 | |a S 007416-0004'01' | ||
908 | |a Konferenz | ||
949 | |a S 007416-0004'01' |w LC |c 1 |i 1093102773 |d 26/7/2001 |e 26/7/2001 |l STACKS |m ZB |n 3 |r Y |s Y |t ZBB |u 25/3/2009 |x ZB-F |1 PRINT |2 KONFERENZ |