This title appears in the Scientific Report :
2010
Please use the identifier:
http://dx.doi.org/10.1016/j.susc.2009.12.006 in citations.
Formation of pits during growth of Si/Ge nanostructures
Formation of pits during growth of Si/Ge nanostructures
Alternating deposition of Ge and Si in the step-flow growth regime using Bi acting as a surfactant can lead to a spontaneous formation of one atomic layer deep pits in the area of surface covered by Ge. During Si growth Ge atoms of the epitaxial 2D Ge layer move to Si step edges where stronger bonds...
Saved in:
Personal Name(s): | Brona, J. |
---|---|
Cherepanov, V. / Romanyuk, K. / Voigtländer, B. | |
Contributing Institute: |
Grenz- und Oberflächen; IBN-3 JARA-FIT; JARA-FIT |
Published in: | Surface science, 604 (2010) S. 424-427 |
Imprint: |
Amsterdam
Elsevier
2010
|
DOI: |
10.1016/j.susc.2009.12.006 |
Document Type: |
Journal Article |
Research Program: |
Kondensierte Materie |
Series Title: |
Surface Science
604 |
Subject (ZB): | |
Publikationsportal JuSER |
Alternating deposition of Ge and Si in the step-flow growth regime using Bi acting as a surfactant can lead to a spontaneous formation of one atomic layer deep pits in the area of surface covered by Ge. During Si growth Ge atoms of the epitaxial 2D Ge layer move to Si step edges where stronger bonds with Si atoms are formed. Appropriate growth conditions can suppress or enhance the pit formation effect and consequently a new type of self-organized nanostructures can be formed. (C) 2009 Elsevier BY. All rights reserved. |