This title appears in the Scientific Report :
2012
Please use the identifier:
http://dx.doi.org/10.1016/j.tsf.2011.08.034 in citations.
Electrical characterization of O-gated uniaxial tensile strained Si nanowire-array metal-oxide-semiconductor field effect transistors with <100> and <110> channel orientations
Electrical characterization of O-gated uniaxial tensile strained Si nanowire-array metal-oxide-semiconductor field effect transistors with <100> and <110> channel orientations
Saved in:
Personal Name(s): | Habicht, S. |
---|---|
Feste, S. / Zhao, Q.T. / Buca, D. / Mantl, S. | |
Contributing Institute: |
JARA-FIT; JARA-FIT Halbleiter-Nanoelektronik; PGI-9 |
Published in: | Thin solid films, 520 (2012) S. 3332 - 3336 |
Imprint: |
Amsterdam [u.a.]
Elsevier
2012
|
Physical Description: |
3332 - 3336 |
DOI: |
10.1016/j.tsf.2011.08.034 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Thin Solid Films
520 |
Publikationsportal JuSER |
Description not available. |