This title appears in the Scientific Report :
2012
Please use the identifier:
http://hdl.handle.net/2128/4965 in citations.
Please use the identifier: http://dx.doi.org/10.1063/1.4759124 in citations.
Hall effect measurements on InAs nanowires
Hall effect measurements on InAs nanowires
We have processed Hall contacts on InAs nanowires grown by molecular beam epitaxy using an electron beam lithography process with an extremely high alignment accuracy. The carrier concentrations determined from the Hall effect measurements on these nanowires are lower by a factor of about 4 in comp...
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Personal Name(s): | Blömers, Christian (Corresponding author) |
---|---|
Grap, T. / Lepsa, Mihail Ion / Moers, Jürgen / Trellenkamp, Stefan / Grützmacher, Detlev / Lüth, Hans / Schäpers, Thomas | |
Contributing Institute: |
PGI-8-PT; PGI-8-PT JARA-FIT; JARA-FIT Halbleiter-Nanoelektronik; PGI-9 |
Published in: | Applied physics letters, 101 (2012) 15, S. 152106 |
Imprint: |
Melville, NY
American Institute of Physics
2012
|
DOI: |
10.1063/1.4759124 |
Document Type: |
Journal Article |
Research Program: |
Spin-based and quantum information |
Link: |
Published under German "Allianz" Licensing conditions on 2012-10-11. Available in OpenAccess from 2012-10-11 |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1063/1.4759124 in citations.
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