This title appears in the Scientific Report : 2013 

Ultrathin highly uniform Ni(Al) germanosilicide layer with modulated B8 type Ni5(SiGe)3 phase formed on strained Si1−xGex layers
Liu, Linjie (Corresponding author)
Jin, Lei / Knoll, Lars / Wirths, Stephan / Nichau, Alexander / Buca, Dan / Mussler, Gregor / Holländer, Bernhard / Xu, Dawei / Feng Di, Zeng / Zhang, Miao / Zhao, Qing-Tai / Mantl, Siegfried
Mikrostrukturforschung; PGI-5
Halbleiter-Nanoelektronik; PGI-9
Applied physics letters, 103 (2013) 23, S. 231909 -
Melville, NY American Institute of Physics 2013
10.1063/1.4838695
Journal Article
Frontiers of charge based Electronics
OpenAccess
Please use the identifier: http://dx.doi.org/10.1063/1.4838695 in citations.
Please use the identifier: http://hdl.handle.net/2128/17342 in citations.
We present a method to form ultrathin highly uniform Ni(Al) germanosilicide layers oncompressively strained Si1xGex substrates and their structural characteristics. The uniform Ni(Al)germanosilicide film is formed with Ni/Al alloy at an optimized temperature of 400 C withan optimized Al atomic content of 20 at.%. We find only two kinds of grains in the layer. Bothgrains show orthogonal relationship with modified B8 type phase. The growth plane is identifiedto be {10-10}-type plane. After germanosilicidation the strain in the rest Si1xGex layer is conserved,which provides a great advantage for device application.