This title appears in the Scientific Report :
2011
Please use the identifier:
http://hdl.handle.net/2128/10938 in citations.
Please use the identifier: http://dx.doi.org/10.1103/PhysRevB.83.155114 in citations.
Influence of the electronic structure on tunneling through ferroelectric insulators: Application to BaTiO3 and PbTiO33
Influence of the electronic structure on tunneling through ferroelectric insulators: Application to BaTiO3 and PbTiO33
Electronic tunneling through ferroelectric insulators is considered to be a key ingredient of future oxide electronics. We investigate the role of the electronic band structure of the decaying electronic states in the band gap by first discussing the expected behavior of tunneling in the effective m...
Saved in:
Personal Name(s): | Wortmann, D. |
---|---|
Blügel, S. | |
Contributing Institute: |
Quanten-Theorie der Materialien; IAS-1 Quanten-Theorie der Materialien; PGI-1 Jülich-Aachen Research Alliance - Simulation Sciences; JARA-SIM JARA-FIT; JARA-FIT |
Published in: | Physical Review B Physical review / B, 83 83 (2011 2011) 15 15, S. 155114 155114 |
Imprint: |
College Park, Md.
APS
2011
|
Physical Description: |
155114 |
DOI: |
10.1103/PhysRevB.83.155114 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Physical Review B
83 |
Subject (ZB): | |
Link: |
Get full text OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1103/PhysRevB.83.155114 in citations.
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