This title appears in the Scientific Report :
2012
Please use the identifier:
http://hdl.handle.net/2128/4524 in citations.
Please use the identifier: http://dx.doi.org/10.1002/cphc.201100738 in citations.
Chemical Etching of Zinc Oxide for Thin-Film Silicon Solar Cells
Chemical Etching of Zinc Oxide for Thin-Film Silicon Solar Cells
Chemical etching is widely applied to texture the surface of sputter-deposited zinc oxide for light scattering in thin-film silicon solar cells. Based on experimental findings from the literature and our own results we propose a model that explains the etching behavior of ZnO depending on the struct...
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Personal Name(s): | Hüpkes, J. |
---|---|
Owen, J. I. / Pust, S. E. / Bunte, E. | |
Contributing Institute: |
Photovoltaik; IEK-5 |
Published in: | ChemPhysChem, 13 (2012) S. 66 - 73 |
Published in: |
ChemPhysChem 2012, 13, 66 – 73 |
Imprint: |
Weinheim
Wiley-VCH Verl.
2012
|
Physical Description: |
66 - 73 |
PubMed ID: |
22162035 |
DOI: |
10.1002/cphc.201100738 |
Document Type: |
Journal Article |
Research Program: |
Erneuerbare Energien |
Series Title: |
ChemPhysChem
13 |
Subject (ZB): | |
Link: |
Get full text OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1002/cphc.201100738 in citations.
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520 | |a Chemical etching is widely applied to texture the surface of sputter-deposited zinc oxide for light scattering in thin-film silicon solar cells. Based on experimental findings from the literature and our own results we propose a model that explains the etching behavior of ZnO depending on the structural material properties and etching agent. All grain boundaries are prone to be etched to a certain threshold, that is defined by the deposition conditions and etching solution. Additionally, several approaches to modify the etching behavior through special preparation and etching steps are provided. | ||
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500 | |a The authors thank G. Wittstock and N. Jacobs (University of Oldenburg, Germany) for their kind assistance with the waterless etching experiments. We are deeply indebted to all former and current coworkers and colleagues who have been involved in joint experiments and discussions concerning the etching behavior of ZnO. The presented model would not exist without their invaluable contributions. Ongoing financial support by the German Federal Environment Ministry (BMU, grants 0327693 A and 0325299 A) and by the Deutsche Forschungsgemeinschaft (DFG, grant PU 447/1-1) is gratefully acknowledged. | ||
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