This title appears in the Scientific Report :
2012
Please use the identifier:
http://dx.doi.org/10.1002/pssc.201100408 in citations.
Residual strain in recessed AlGaN/GaN heterostructure field-effect transistors evaluated by micro photoluminescence measurements
Residual strain in recessed AlGaN/GaN heterostructure field-effect transistors evaluated by micro photoluminescence measurements
Saved in:
Personal Name(s): | Mikulics, M. |
---|---|
Hardtdegen, H. / Winden, A. / Fox, A. / Marso, M. / Sofer, Z. / Lüth, H. / Grützmacher, D. / Kordos, P. | |
Contributing Institute: |
JARA-FIT; JARA-FIT Halbleiter-Nanoelektronik; PGI-9 |
Published in: | Physica status solidi / C, 9 (2012) S. 911-914 |
Imprint: |
Berlin
Wiley-VCH
2012
|
Physical Description: |
911-914 |
DOI: |
10.1002/pssc.201100408 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Physica Status Solidi C
9 |
Publikationsportal JuSER |
Description not available. |