This title appears in the Scientific Report :
2015
Please use the identifier:
http://dx.doi.org/10.1016/j.pcrysgrow.2015.10.001 in citations.
Modern chemical synthesis methods towards low-dimensional phase change structures in the Ge–Sb–Te material system
Modern chemical synthesis methods towards low-dimensional phase change structures in the Ge–Sb–Te material system
This report centers on different modern chemical synthesis methods suitable for production with which low-dimensional crystalline structures are attainable in the Ge–Sb–Te material system. The general characteristics of the methods are described first. The special challenges are discussed for the Ge...
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Personal Name(s): | Hardtdegen, Hilde (Corresponding author) |
---|---|
Mikulics, Martin / Rieß, Sally / Schuck, Martin / Saltzmann, Tobias / Simon, Ulrich / Longo, Massimo | |
Contributing Institute: |
Halbleiter-Nanoelektronik; PGI-9 |
Published in: | Progress in crystal growth and characterization of materials, 61 (2015) 2-4, S. 27 - 45 |
Imprint: |
Amsterdam [u.a.]
Elsevier
2015
|
DOI: |
10.1016/j.pcrysgrow.2015.10.001 |
Document Type: |
Journal Article |
Research Program: |
Controlling Configuration-Based Phenomena |
Publikationsportal JuSER |
This report centers on different modern chemical synthesis methods suitable for production with which low-dimensional crystalline structures are attainable in the Ge–Sb–Te material system. The general characteristics of the methods are described first. The special challenges are discussed for the Ge–Sb–Te material system. Growth optimization is studied, and the resulting nanostructures are presented. At last a comparison of the methods is given with respect to research scale vapor transport approach on the one hand and the potential described for future application in technology on the other hand. |