This title appears in the Scientific Report :
2002
Fundamental processes in Si/Si epitaxy studied by scanning tunnelling microscopy during growth I
Fundamental processes in Si/Si epitaxy studied by scanning tunnelling microscopy during growth I
Saved in:
Personal Name(s): | Voigtländer, B. |
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Contributing Institute: |
Institut für Grenzflächen und Vakuumtechnologien; ISG-3 |
Published in: |
School and Workshop on Nanotubes and Nanostructures |
Imprint: |
2002
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Conference: | Frascati, Italien 2002-09-23 |
Document Type: |
Conference Presentation |
Research Program: |
Kondensierte Materie |
Publikationsportal JuSER |
Description not available. |