This title appears in the Scientific Report : 2003 

XRF and SIMS/SNMS analyses of BaxSr1-xTiO3 dielectrics
Breuer, U.
Krumpen, W. / Fitsilis, F.
Elektrokeramische Materialien; IFF-EKM
Zentralabteilung für Chemische Analysen; ZCH
Analytical and bioanalytical chemistry, 375 (2003) S. 906 - 911
Berlin Springer 2003
906 - 911
10.1007/s00216-003-1806-4
12707759
Journal Article
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
Analytical and Bioanalytical Chemistry 375
J
XRF
BST
Please use the identifier: http://dx.doi.org/10.1007/s00216-003-1806-4 in citations.
The development of analytical tools and procedures for process control is a prerequisite for the integration of high permittivity and/or ferroelectric materials in CMOS devices. The thickness and composition of perovskite oxide films were determined by wavelength dispersive X-ray fluorescence analysis (XRF) with special emphasis on the ratio of the group-II elements to the Ti content, and a precision of 0.5% was achieved for a typical film thickness of 20-30 nm. Secondary ion mass spectrometry (SIMS) and sputtered neutrals mass spectrometry (SNMS) was used for depth profiling to determine film homogeneity and elemental interdiffusion at hetero-interfaces. Examples are given for Ba(x)Sr(1-x)TiO(3) and SrTiO(x) thin films which were grown in a prototype MOCVD production tool. No interdiffusion was observed for films grown at 600 degrees C on Pt electrodes in contrast to films grown directly on Si.