This title appears in the Scientific Report :
2003
Please use the identifier:
http://dx.doi.org/10.1007/s00216-003-1806-4 in citations.
XRF and SIMS/SNMS analyses of BaxSr1-xTiO3 dielectrics
XRF and SIMS/SNMS analyses of BaxSr1-xTiO3 dielectrics
The development of analytical tools and procedures for process control is a prerequisite for the integration of high permittivity and/or ferroelectric materials in CMOS devices. The thickness and composition of perovskite oxide films were determined by wavelength dispersive X-ray fluorescence analys...
Saved in:
Personal Name(s): | Breuer, U. |
---|---|
Krumpen, W. / Fitsilis, F. | |
Contributing Institute: |
Elektrokeramische Materialien; IFF-EKM Zentralabteilung für Chemische Analysen; ZCH |
Published in: | Analytical and bioanalytical chemistry, 375 (2003) S. 906 - 911 |
Imprint: |
Berlin
Springer
2003
|
Physical Description: |
906 - 911 |
DOI: |
10.1007/s00216-003-1806-4 |
PubMed ID: |
12707759 |
Document Type: |
Journal Article |
Research Program: |
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik |
Series Title: |
Analytical and Bioanalytical Chemistry
375 |
Subject (ZB): | |
Publikationsportal JuSER |
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520 | |a The development of analytical tools and procedures for process control is a prerequisite for the integration of high permittivity and/or ferroelectric materials in CMOS devices. The thickness and composition of perovskite oxide films were determined by wavelength dispersive X-ray fluorescence analysis (XRF) with special emphasis on the ratio of the group-II elements to the Ti content, and a precision of 0.5% was achieved for a typical film thickness of 20-30 nm. Secondary ion mass spectrometry (SIMS) and sputtered neutrals mass spectrometry (SNMS) was used for depth profiling to determine film homogeneity and elemental interdiffusion at hetero-interfaces. Examples are given for Ba(x)Sr(1-x)TiO(3) and SrTiO(x) thin films which were grown in a prototype MOCVD production tool. No interdiffusion was observed for films grown at 600 degrees C on Pt electrodes in contrast to films grown directly on Si. | ||
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