This title appears in the Scientific Report : 2008 

Large-grained poly-Si films on ZnO:Al coated glass substrates
Lee, K. Y.
Muske, M. / Gordon, I. / Berginski, M. / D'Haen, J. / Huepkes, J. / Gall, S. / Rech, B.
Photovoltaik; IEF-5
Thin solid films, 516 (2008)
Amsterdam [u.a.] Elsevier 2008
10.1016/j.tsf.2007.12.128
Journal Article
Erneuerbare Energien
Thin Solid Films 516
J
Please use the identifier: http://dx.doi.org/10.1016/j.tsf.2007.12.128 in citations.
Thin film polycrystalline silicon (poly-Si) films have been fabricated by the aluminium-induced layer exchange (ALILE) process on ZnO:Al coated glass. The formation of the poly-Si films was observed during the annealing process using an optical microscope. Poly-Si films formed on ZnO:l coated glass consist of high-quality poly-Si material, as evidenced by Raman measurement. The average grain size of the poly-Si films slightly increases with decreasing annealing temperature. The formation of poly-Si films on ZnO:Al coated glass led to a preferential (001) orientation at all annealing temperatures (425 degrees C similar to 525 degrees C). (C) 2007 Elsevier B.V. All rights reserved.