This title appears in the Scientific Report :
2008
Please use the identifier:
http://dx.doi.org/10.1016/j.tsf.2007.12.128 in citations.
Large-grained poly-Si films on ZnO:Al coated glass substrates
Large-grained poly-Si films on ZnO:Al coated glass substrates
Thin film polycrystalline silicon (poly-Si) films have been fabricated by the aluminium-induced layer exchange (ALILE) process on ZnO:Al coated glass. The formation of the poly-Si films was observed during the annealing process using an optical microscope. Poly-Si films formed on ZnO:l coated glass...
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Personal Name(s): | Lee, K. Y. |
---|---|
Muske, M. / Gordon, I. / Berginski, M. / D'Haen, J. / Huepkes, J. / Gall, S. / Rech, B. | |
Contributing Institute: |
Photovoltaik; IEF-5 |
Published in: | Thin solid films, 516 (2008) |
Imprint: |
Amsterdam [u.a.]
Elsevier
2008
|
DOI: |
10.1016/j.tsf.2007.12.128 |
Document Type: |
Journal Article |
Research Program: |
Erneuerbare Energien |
Series Title: |
Thin Solid Films
516 |
Subject (ZB): | |
Publikationsportal JuSER |
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520 | |a Thin film polycrystalline silicon (poly-Si) films have been fabricated by the aluminium-induced layer exchange (ALILE) process on ZnO:Al coated glass. The formation of the poly-Si films was observed during the annealing process using an optical microscope. Poly-Si films formed on ZnO:l coated glass consist of high-quality poly-Si material, as evidenced by Raman measurement. The average grain size of the poly-Si films slightly increases with decreasing annealing temperature. The formation of poly-Si films on ZnO:Al coated glass led to a preferential (001) orientation at all annealing temperatures (425 degrees C similar to 525 degrees C). (C) 2007 Elsevier B.V. All rights reserved. | ||
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