This title appears in the Scientific Report : 2003 

Stability of microcrystalline silicon for thin film solar cell applications
Finger, F.
Carius, R. / Dylla, T. / Klein, S. / Okur, S. / Günes, M.
Institut für Photovoltaik; IPV
IEE proceedings / Circuits, devices and systems, 150 (2003) S. 300 - 308
London Institution of Electrical Engineers 2003
300 - 308
10.1049/ip-cds:20030636
Journal Article
Photovoltaik
IEE Proceedings - Circuits, Devices and Systems 150
J
Please use the identifier: http://dx.doi.org/10.1049/ip-cds:20030636 in citations.
The development of microcrystalline silicon (muc-Si:H) for solar cells has made good progress with efficiencies better than those of amorphous silicon (a-Si:H) devices. Of particular interest is the absence of light-induced degradation in highly crystalline muc-Si:H. However, the highest efficiencies are obtained with material which may still include a-Si:H regions and light-induced changes may be expected in such material. On the other hand, material of high crystallinity is susceptible to in-diffusion of atmospheric gases which, through adsorption or oxidation, affect the electronic transport. Investigations are presented of such effects concerning the stability of muc-Si:H films and solar cells prepared by plasma-enhanced chemical vapour deposition and hot wire chemical vapour deposition.