This title appears in the Scientific Report :
2003
Please use the identifier:
http://dx.doi.org/10.1023/A:1026137928020 in citations.
A comparison of microcrystalline silicon prepared with plasma-enhanced chemical vapor deposition and hot-wire chemical vapor deposition: electronic and device properties
A comparison of microcrystalline silicon prepared with plasma-enhanced chemical vapor deposition and hot-wire chemical vapor deposition: electronic and device properties
The optoelectronic properties of undoped muc-Si: H have been investigated, with emphasis on the states close to the edges of the band gap. The usefulness of the constant photocurrent method (CPM) for the determination of the absorption coefficient, alpha(E), is critically described. Combined with ca...
Saved in:
Personal Name(s): | Carius, R. |
---|---|
Merdzhanova, T. / Finger, F. / Klein, S. / Vetterl, O. | |
Contributing Institute: |
Institut für Photovoltaik; IPV |
Published in: | Journal of materials science / Materials in electronics, 14 (2003) S. 625 |
Imprint: |
Dordrecht [u.a.]
Springer Science + Business Media B.V
2003
|
Physical Description: |
625 |
DOI: |
10.1023/A:1026137928020 |
Document Type: |
Journal Article |
Research Program: |
Photovoltaik |
Series Title: |
Journal of Materials Science - Materials in Electronics
14 |
Subject (ZB): | |
Publikationsportal JuSER |
The optoelectronic properties of undoped muc-Si: H have been investigated, with emphasis on the states close to the edges of the band gap. The usefulness of the constant photocurrent method (CPM) for the determination of the absorption coefficient, alpha(E), is critically described. Combined with carefully evaluated photothermal deflection spectroscopy data, CPM spectra yield valuable information on the transport and dynamics of photo-generated carriers. By comparing photoluminescence and Raman spectra on high-quality samples prepared by plasma-enhanced and hot-wire chemical vapor deposition, with different silane concentrations in the gas stream, a correlation between the microstructure and photoluminescence energy is obtained. It is proposed that the density of band tail states is reduced with increasing silane concentration, leading to an increase in the photoluminescence energy and in the open-circuit voltages of solar cells. (C) 2003 Kluwer Academic Publishers. |