This title appears in the Scientific Report :
2003
Please use the identifier:
http://dx.doi.org/10.1063/1.1627944 in citations.
Please use the identifier: http://hdl.handle.net/2128/1062 in citations.
Resistive switching in metal-ferroelectric-metal junctions
Resistive switching in metal-ferroelectric-metal junctions
The aim of this work is to investigate the electron transport through metal-ferroelectric-metal (MFM) junctions with ultrathin barriers in order to determine its dependence on the polarization state of the barrier. To that end, heteroepitaxial Pt/Pb(Zr0.52Ti0.48)O-3/SrRuO3 junctions have been fabric...
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Personal Name(s): | Rodriguez-Contreras, J. |
---|---|
Kohlstedt, H. / Poppe, U. / Waser, R. / Buchal, Ch. / Pertsev, N. A. | |
Contributing Institute: |
Mikrostrukturforschung; IFF-IMF |
Published in: | Applied physics letters, 83 (2003) S. 4595 |
Imprint: |
Melville, NY
American Institute of Physics
2003
|
Physical Description: |
4595 |
DOI: |
10.1063/1.1627944 |
Document Type: |
Journal Article |
Research Program: |
Kondensierte Materie |
Series Title: |
Applied Physics Letters
83 |
Subject (ZB): | |
Link: |
Get full text OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/1062 in citations.
The aim of this work is to investigate the electron transport through metal-ferroelectric-metal (MFM) junctions with ultrathin barriers in order to determine its dependence on the polarization state of the barrier. To that end, heteroepitaxial Pt/Pb(Zr0.52Ti0.48)O-3/SrRuO3 junctions have been fabricated on lattice-matched SrTiO3 substrates. The current-voltage (I-V) characteristics of the MFM junctions involving a few-nanometer-thick Pb(Zr0.52Ti0.48)O-3 barriers have been recorded at temperatures between 4.2 K and 300 K. Typical I-V curves exhibit reproducible switching events at well-defined electric fields. The mechanism of charge transport through ultrathin barriers and the origin of the observed resistive switching effect are discussed. (C) 2003 American Institute of Physics. |