Description: Surface states and origin of the Fermi level pinning on nonpolar GaN(1100) surfaces

This title appears in the Scientific Report : 2008

Surface states and origin of the Fermi level pinning on nonpolar GaN(1100) surfaces

GaN1000 cleavage surfaces were investigated by cross-sectional scanning tunneling microscopy and spectroscopy. It is found that both the N and Ga derived intrinsic dangling bond surface states are outside of the fundamental band gap. Their band edges are both located at the Gamma point of the surfac...

Personal Name(s):	Ivanova, L.
	Borisova, S. / Eisele, H. / Dähne, M. / Laubsch, A. / Ebert, Ph.
Contributing Institute:	Mikrostrukturforschung; IFF-8
Published in:	Applied physics letters, 93 (2008) S. 92110
Imprint:	Melville, NY American Institute of Physics 2008
Physical Description:	92110
DOI:	10.1063/1.3026743
Document Type:	Journal Article
Research Program:	Kondensierte Materie
Series Title:	Applied Physics Letters 93
Subject (ZB):	J Brillouin zones conduction bands dangling bonds energy gap Fermi level gallium compounds III-V semiconductors scanning tunnelling microscopy scanning tunnelling spectroscopy surface states wide band gap semiconductors
Link:	Get full text OpenAccess OpenAccess
	Publikationsportal JuSER

Please use the identifier: http://dx.doi.org/10.1063/1.3026743 in citations.
Please use the identifier: http://hdl.handle.net/2128/17203 in citations.

GaN1000 cleavage surfaces were investigated by cross-sectional scanning tunneling microscopy and spectroscopy. It is found that both the N and Ga derived intrinsic dangling bond surface states are outside of the fundamental band gap. Their band edges are both located at the Gamma point of the surface Brillouin zone. The observed Fermi level pinning at 1.0 eV below the conduction band edge is attributed to the high step and defect density at the surface but not to intrinsic surface states.