This title appears in the Scientific Report :
2007
Please use the identifier:
http://dx.doi.org/10.1002/pssr.200701242 in citations.
Novel post-process for the passivation of a CMOS biosensor
Novel post-process for the passivation of a CMOS biosensor
Sensors, which are designed and fabricated in complementary metal oxide semiconductor (CMOS) technology, have become increasingly important in the field of bioelectronics. The standardized industry processes enable a fast, cheap, and reliable fabrication of biosensor devices with integrated addressi...
Saved in:
Personal Name(s): | Schindler, M. |
---|---|
Kim, S. K. / Hwang, C. S. / Schindler, C. / Offenhäusser, A. / Ingebrandt, S. | |
Contributing Institute: |
Center of Nanoelectronic Systems for Information Technology; CNI Institut für Bio- und Nanosysteme - Bioelektronik; IBN-2 |
Published in: | Physica status solidi / Rapid research letters, 2 (2008) S. 4 - 6 |
Imprint: |
Weinheim
Wiley-VCH
2008
|
Physical Description: |
4 - 6 |
DOI: |
10.1002/pssr.200701242 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Physica Status Solidi - Rapid Research Letters
2 |
Subject (ZB): | |
Publikationsportal JuSER |
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245 | |a Novel post-process for the passivation of a CMOS biosensor | ||
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520 | |a Sensors, which are designed and fabricated in complementary metal oxide semiconductor (CMOS) technology, have become increasingly important in the field of bioelectronics. The standardized industry processes enable a fast, cheap, and reliable fabrication of biosensor devices with integrated addressing and processing units. However, the interfacing of such chips with a liquid environment has been a challenge in recent years. Especially for interfacing living cells with CMOS biosensors different elaborate post-processes have been proposed. In this article we describe a novel and single step passivation of a CMOS biosensor using a bio-compatible high-permittivity thin film, which can be directly applied to the top aluminium layer of a CMOS process. The aluminium oxide and hafnium oxide multi-layer thin films were prepared using atomic layer deposition at low process temperatures. Electrical I-V and capacitance measurements as well as electrochemical leakage current measurements were performed on films grown on aluminium bottom electrodes. The films showed a very low leakage current and were stable up to 6 V at a thickness of just 50 nm. (C) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. | ||
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