This title appears in the Scientific Report :
2009
Please use the identifier:
http://dx.doi.org/10.1103/PhysRevB.80.085316 in citations.
Please use the identifier: http://hdl.handle.net/2128/11027 in citations.
Scanning tunneling microscopy on unpinned GaN(1100) surfaces:Invisibility of valence-band states
Scanning tunneling microscopy on unpinned GaN(1100) surfaces:Invisibility of valence-band states
We investigated the origins of the tunnel current in scanning tunneling microscopy (STM) and spectroscopy experiments on GaN(1100) surfaces. By calculating the tunnel currents in the presence of a tip-induced band bending for unpinned n-type GaN(1100) surfaces, we demonstrate that only conduction-ba...
Saved in:
Personal Name(s): | Ebert, Ph. |
---|---|
Ivanova, L. / Eisele, H. | |
Contributing Institute: |
Mikrostrukturforschung; IFF-8 |
Published in: | Physical Review B Physical review / B, 80 80 (2009 2009) 8 8, S. 085316 085316 |
Imprint: |
College Park, Md.
APS
2009
|
Physical Description: |
085316 |
DOI: |
10.1103/PhysRevB.80.085316 |
Document Type: |
Journal Article |
Research Program: |
Grundlagen für zukünftige Informationstechnologien |
Series Title: |
Physical Review B
80 |
Subject (ZB): | |
Link: |
Get full text OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/11027 in citations.
LEADER | 06104nam a2201033 a 4500 | ||
---|---|---|---|
001 | 5922 | ||
005 | 20230426083012.0 | ||
024 | 7 | |a 10.1103/PhysRevB.80.085316 |2 DOI | |
024 | 7 | |a WOS:000269639300077 |2 WOS | |
024 | 7 | |a 2128/11027 |2 Handle | |
037 | |a PreJuSER-5922 | ||
041 | |a eng | ||
082 | |a 530 | ||
084 | |2 WoS |a Physics, Condensed Matter | ||
100 | 1 | |a Ebert, Ph. |b 0 |u FZJ |0 P:(DE-Juel1)VDB18197 | |
245 | |a Scanning tunneling microscopy on unpinned GaN(1100) surfaces:Invisibility of valence-band states | ||
260 | |a College Park, Md. |b APS |c 2009 | ||
300 | |a 085316 | ||
440 | 0 | |a Physical Review B |x 1098-0121 |0 4919 |y 8 |v 80 | |
500 | |a The authors thank the Deutsche Forschungsgemeinschaft for financial support. | ||
520 | |a We investigated the origins of the tunnel current in scanning tunneling microscopy (STM) and spectroscopy experiments on GaN(1100) surfaces. By calculating the tunnel currents in the presence of a tip-induced band bending for unpinned n-type GaN(1100) surfaces, we demonstrate that only conduction-band states are observed at positive and negative voltage polarities independent of the doping concentration. Valence-band states remain undetectable because tunneling out of the electron-accumulation zone in conduction-band states dominates by four orders of magnitude. As a result band-gap sizes cannot be determined by STM on unpinned GaN(1100) surfaces. Appropriate band-edge positions and gap sizes can be determined on pinned surfaces. | ||
542 | |i 2009-08-24 |2 Crossref |u http://link.aps.org/licenses/aps-default-license | ||
588 | |a Dataset connected to Web of Science | ||
650 | 7 | |a J |2 WoSType | |
653 | 2 | 0 | |2 Author |a conduction bands |
653 | 2 | 0 | |2 Author |a energy gap |
653 | 2 | 0 | |2 Author |a gallium compounds |
653 | 2 | 0 | |2 Author |a III-V semiconductors |
653 | 2 | 0 | |2 Author |a scanning tunnelling microscopy |
653 | 2 | 0 | |2 Author |a surface states |
653 | 2 | 0 | |2 Author |a valence bands |
700 | 1 | |a Ivanova, L. |b 1 |0 P:(DE-HGF)0 | |
700 | 1 | |a Eisele, H. |b 2 |0 P:(DE-HGF)0 | |
773 | 1 | 8 | |a 10.1103/physrevb.80.085316 |b American Physical Society (APS) |d 2009-08-24 |n 8 |p 085316 |3 journal-article |2 Crossref |t Physical Review B |v 80 |y 2009 |x 1098-0121 |
773 | |a 10.1103/PhysRevB.80.085316 |g Vol. 80, p. 085316 |p 085316 |n 8 |q 80<085316 |0 PERI:(DE-600)2844160-6 |t Physical review / B |v 80 |y 2009 |x 1098-0121 | ||
856 | 7 | |u http://dx.doi.org/10.1103/PhysRevB.80.085316 | |
856 | 4 | |u http://juser.fz-juelich.de/record/5922/files/PhysRevB.80.085316.pdf |y OpenAccess | |
856 | 4 | |u http://juser.fz-juelich.de/record/5922/files/PhysRevB.80.085316.gif?subformat=icon |x icon |y OpenAccess | |
856 | 4 | |u http://juser.fz-juelich.de/record/5922/files/PhysRevB.80.085316.jpg?subformat=icon-180 |x icon-180 |y OpenAccess | |
856 | 4 | |u http://juser.fz-juelich.de/record/5922/files/PhysRevB.80.085316.jpg?subformat=icon-700 |x icon-700 |y OpenAccess | |
856 | 4 | |u http://juser.fz-juelich.de/record/5922/files/PhysRevB.80.085316.pdf?subformat=pdfa |x pdfa |y OpenAccess | |
909 | C | O | |o oai:juser.fz-juelich.de:5922 |p openaire |p open_access |p driver |p VDB |p dnbdelivery |
913 | 1 | |k P42 |v Grundlagen für zukünftige Informationstechnologien |l Grundlagen für zukünftige Informationstechnologien (FIT) |b Schlüsseltechnologien |0 G:(DE-Juel1)FUEK412 |x 0 | |
914 | 1 | |y 2009 | |
915 | |a American Physical Society Transfer of Copyright Agreement |0 LIC:(DE-HGF)APS-112012 |2 HGFVOC | ||
915 | |a OpenAccess |0 StatID:(DE-HGF)0510 |2 StatID | ||
915 | |a JCR/ISI refereed |0 StatID:(DE-HGF)0010 | ||
970 | |a VDB:(DE-Juel1)113867 | ||
980 | |a VDB | ||
980 | |a ConvertedRecord | ||
980 | |a journal | ||
980 | |a I:(DE-Juel1)PGI-5-20110106 | ||
980 | |a UNRESTRICTED | ||
980 | 1 | |a FullTexts | |
999 | C | 5 | |a 10.1103/PhysRevLett.50.1998 |9 -- missing cx lookup -- |2 Crossref |
999 | C | 5 | |a 10.1103/PhysRevB.31.805 |9 -- missing cx lookup -- |2 Crossref |
999 | C | 5 | |a 10.1103/PhysRevLett.58.1192 |9 -- missing cx lookup -- |2 Crossref |
999 | C | 5 | |a 10.1063/1.103563 |9 -- missing cx lookup -- |2 Crossref |
999 | C | 5 | |a 10.1063/1.110073 |9 -- missing cx lookup -- |2 Crossref |
999 | C | 5 | |a 10.1088/0268-1242/9/12/001 |9 -- missing cx lookup -- |2 Crossref |
999 | C | 5 | |a 10.1103/PhysRevB.63.245311 |9 -- missing cx lookup -- |2 Crossref |
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999 | C | 5 | |a 10.1063/1.3026743 |9 -- missing cx lookup -- |2 Crossref |
999 | C | 5 | |a 10.1063/1.3073741 |9 -- missing cx lookup -- |2 Crossref |
999 | C | 5 | |a 10.1063/1.3123258 |9 -- missing cx lookup -- |2 Crossref |
999 | C | 5 | |a 10.1116/1.583691 |9 -- missing cx lookup -- |2 Crossref |
999 | C | 5 | |a 10.1103/PhysRevB.67.165327 |9 -- missing cx lookup -- |2 Crossref |
999 | C | 5 | |a 10.1016/0039-6028(92)90920-2 |9 -- missing cx lookup -- |2 Crossref |
999 | C | 5 | |a 10.1016/0304-3991(92)90371-P |9 -- missing cx lookup -- |2 Crossref |
999 | C | 5 | |a 10.1103/PhysRevLett.57.2579 |9 -- missing cx lookup -- |2 Crossref |
999 | C | 5 | |a 10.1103/PhysRevB.41.9880 |9 -- missing cx lookup -- |2 Crossref |
999 | C | 5 | |a 10.1103/PhysRevB.53.R10477 |9 -- missing cx lookup -- |2 Crossref |
999 | C | 5 | |a 10.1063/1.1723358 |9 -- missing cx lookup -- |2 Crossref |
999 | C | 5 | |a 10.1103/PhysRevB.65.195318 |9 -- missing cx lookup -- |2 Crossref |
999 | C | 5 | |a 10.1016/0039-6028(86)90243-8 |9 -- missing cx lookup -- |2 Crossref |
999 | C | 5 | |a 10.1103/PhysRevB.31.2602 |9 -- missing cx lookup -- |2 Crossref |
999 | C | 5 | |a 10.1063/1.1569419 |9 -- missing cx lookup -- |2 Crossref |
536 | |a Grundlagen für zukünftige Informationstechnologien |c P42 |2 G:(DE-HGF) |0 G:(DE-Juel1)FUEK412 |x 0 | ||
336 | |a ARTICLE |2 BibTeX | ||
336 | |a Nanopartikel unedler Metalle (Mg0, Al0, Gd0, Sm0) |0 0 |2 EndNote | ||
336 | |a Output Types/Journal article |2 DataCite | ||
336 | |a Journal Article |0 PUB:(DE-HGF)16 |2 PUB:(DE-HGF) | ||
336 | |a article |2 DRIVER | ||
336 | |a JOURNAL_ARTICLE |2 ORCID | ||
981 | |a I:(DE-Juel1)PGI-5-20110106 | ||
920 | |k Mikrostrukturforschung; IFF-8 |l Mikrostrukturforschung |d 31.12.2010 |g IFF |0 I:(DE-Juel1)VDB788 |x 0 | ||
990 | |a Ebert, Ph. |b 0 |u FZJ |0 P:(DE-Juel1)VDB18197 | ||
991 | |a Eisele, H. |b 2 |0 P:(DE-HGF)0 | ||
991 | |a Ivanova, L. |b 1 |0 P:(DE-HGF)0 |