Description: Optical band gap of BiFe03 grown by adsorption-controlled molecular-beam epitaxy

This title appears in the Scientific Report : 2008

Optical band gap of BiFe03 grown by adsorption-controlled molecular-beam epitaxy

BiFeO3 thin films have been deposited on (001) SrTiO3 substrates by adsorption-controlled reactive molecular-beam epitaxy. For a given bismuth overpressure and oxygen activity, single-phase BiFeO3 films can be grown over a range of deposition temperatures in accordance with thermodynamic calculation...

Personal Name(s):	Ihlefeld, J.F.
	Podraza, N. J. / Liu, Z.K. / Rai, R.C. / Xu, X. / Heeg, T. / Chen, Y.B. / Li, J. / Collins, R. W. / Musfeldt, J.L. / Pan, X. Q. / Schubert, J. / Ramesh, R. / Schlom, D. G.
Contributing Institute:	Center of Nanoelectronic Systems for Information Technology; CNI Halbleiter-Nanoelektronik; IBN-1
Published in:	Applied physics letters, 92 (2008) S. 142908
Imprint:	Melville, NY American Institute of Physics 2008
Physical Description:	142908
DOI:	10.1063/1.2901160
Document Type:	Journal Article
Research Program:	Grundlagen für zukünftige Informationstechnologien
Series Title:	Applied Physics Letters 92
Subject (ZB):	J
Link:	Get full text OpenAccess OpenAccess
	Publikationsportal JuSER

Please use the identifier: http://hdl.handle.net/2128/17409 in citations.
Please use the identifier: http://dx.doi.org/10.1063/1.2901160 in citations.

BiFeO3 thin films have been deposited on (001) SrTiO3 substrates by adsorption-controlled reactive molecular-beam epitaxy. For a given bismuth overpressure and oxygen activity, single-phase BiFeO3 films can be grown over a range of deposition temperatures in accordance with thermodynamic calculations. Four-circle x-ray diffraction reveals phase-pure, epitaxial films with omega rocking curve full width at half maximum values as narrow as 29 arc sec (0.008 degrees). Multiple-angle spectroscopic ellipsometry reveals a direct optical band gap at 2.74 eV for stoichiometric as well as 5% bismuth-deficient single-phase BiFeO3 films. (C) 2008 American Institute of Physics.