This title appears in the Scientific Report :
2016
Please use the identifier:
http://dx.doi.org/10.1002/9781118984772.ch11 in citations.
Silicon-Based Cooling Elements
Silicon-Based Cooling Elements
This chapter presents an introduction to superconductor-semiconductor (S-Sm) tunnel junction coolers, before outlining some of the progresses made during the nanofunction program on electron cooling from 300 mK in silicon-based junctions. PtSi is an interesting material to consider as a Schottky bar...
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Personal Name(s): | Balestra, Francis (Editor) |
---|---|
Leadley, David / Prest, Martin / Ahopelto, Jouni / Brien, Tom / Gunnarsson, David / Mauskopf, Phil / Muhonen, Juha / Myronov, Maksym / Nguyen, Hung / Parker, Evan / Prunnila, Mika / Richardson-Bullock, James / Shah, Vishal / Whall, Terry / Zhao, Qing-Tai | |
Contributing Institute: |
Halbleiter-Nanoelektronik; PGI-9 |
Published in: |
Beyond-CMOS Nanodevices 1 / Balestra, Francis (Editor) |
Imprint: |
Hoboken, NJ, USA
John Wiley & Sons, Inc.
2014
|
Physical Description: |
303-330 |
ISBN: |
1-84821-654-8 978-1-84821-654-9 |
DOI: |
10.1002/9781118984772.ch11 |
Document Type: |
Contribution to a book |
Research Program: |
Controlling Electron Charge-Based Phenomena |
Series Title: |
ISTE
|
Publikationsportal JuSER |
This chapter presents an introduction to superconductor-semiconductor (S-Sm) tunnel junction coolers, before outlining some of the progresses made during the nanofunction program on electron cooling from 300 mK in silicon-based junctions. PtSi is an interesting material to consider as a Schottky barrier to Si because of its role as a contact material in the semiconductor industry. The chapter investigates carrier-phonon coupling in unstrained silicon, with both n- and p-type dopants, and the effect of increasing the strain in silicon grown on a Si1–xGex virtual substrate with the Ge fraction x of 20% and 30%. The reduction in e-ph coupling shows promise for dramatic improvements in performance of bolometric detectors for a variety of electromagnetic radiation sensing applications using silicon based cold electron bolometers. |