This title appears in the Scientific Report : 2016 

Performance Benchmarking of p-type In0.65Ga0.35As/GaAs0.4Sb0.6 andGe/Ge0.93Sn0.07 Hetero-junction Tunnel FETs
Pandey, R.
Schulte-Braucks, Christian / Sajjad, R. N. / Barth, M. / Gosh, R. K. / Grisafe, B. / Sharma, P. / von den Driesch, Nils / Vohra, A. / Rayner, B. / Loo, R. / Mantl, Siegfried / Buca, Dan Mihai / Yeh, C-C. / Wu, C-H. / Tsai, W. / Antoniadis, D. / Datta, S. (Corresponding author)
JARA-FIT; JARA-FIT
Halbleiter-Nanoelektronik; PGI-9
2016
19.6.1-19.6.4
2016 IEEE International Electron Devices Meeting (IEDM), San Francisco (USA), 2016-12-05 - 2016-12-07
Contribution to a conference proceedings
Energy Efficient Tunnel FET Switches and Circuits
Controlling Electron Charge-Based Phenomena
Description not available.