This title appears in the Scientific Report :
2016
Performance Benchmarking of p-type In0.65Ga0.35As/GaAs0.4Sb0.6 andGe/Ge0.93Sn0.07 Hetero-junction Tunnel FETs
Performance Benchmarking of p-type In0.65Ga0.35As/GaAs0.4Sb0.6 andGe/Ge0.93Sn0.07 Hetero-junction Tunnel FETs
Saved in:
Personal Name(s): | Pandey, R. |
---|---|
Schulte-Braucks, Christian / Sajjad, R. N. / Barth, M. / Gosh, R. K. / Grisafe, B. / Sharma, P. / von den Driesch, Nils / Vohra, A. / Rayner, B. / Loo, R. / Mantl, Siegfried / Buca, Dan Mihai / Yeh, C-C. / Wu, C-H. / Tsai, W. / Antoniadis, D. / Datta, S. (Corresponding author) | |
Contributing Institute: |
JARA-FIT; JARA-FIT Halbleiter-Nanoelektronik; PGI-9 |
Imprint: |
2016
|
Physical Description: |
19.6.1-19.6.4 |
Conference: | 2016 IEEE International Electron Devices Meeting (IEDM), San Francisco (USA), 2016-12-05 - 2016-12-07 |
Document Type: |
Contribution to a conference proceedings |
Research Program: |
Energy Efficient Tunnel FET Switches and Circuits Controlling Electron Charge-Based Phenomena |
Publikationsportal JuSER |
Description not available. |