This title appears in the Scientific Report :
2016
Please use the identifier:
http://hdl.handle.net/2128/19363 in citations.
Please use the identifier: http://dx.doi.org/10.1017/S1431927616012289 in citations.
Direct Observation of Redox Switching in Resistive Memory Devices Operated In-situ in a Transmission Electron Microscope by Electron Energy Loss Spectroscopy and Off-Axis Electron Holography
Direct Observation of Redox Switching in Resistive Memory Devices Operated In-situ in a Transmission Electron Microscope by Electron Energy Loss Spectroscopy and Off-Axis Electron Holography
Saved in:
Personal Name(s): | Cooper, David |
---|---|
Bernier, Nicolas / Baumer, Christoph / Dunin-Borkowski, Rafal / Dittmann, Regina | |
Contributing Institute: |
Elektronische Materialien; PGI-7 Physik Nanoskaliger Systeme; ER-C-1 Mikrostrukturforschung; PGI-5 |
Published in: | Microscopy and microanalysis, 22 (2016) S5, S. 52 - 53 |
Imprint: |
New York, NY
Cambridge University Press
2016
|
Physical Description: |
52 - 53 |
DOI: |
10.1017/S1431927616012289 |
Conference: | 3rd International Conference on Insitu and Correlative Electron Microscopy, Saarbrücken (Germany), 2016-10-11 - 2016-10-12 |
Document Type: |
Contribution to a conference proceedings Journal Article |
Research Program: |
Controlling Configuration-Based Phenomena |
Link: |
OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1017/S1431927616012289 in citations.
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