Die Streuung von Leitungselektronen an Fehlstellen in Metallen nach der Pseudopotential Methode
Die Streuung von Leitungselektronen an Fehlstellen in Metallen nach der Pseudopotential Methode
The transition probability for the scattering of conduction electrons at point defects in metals is calculated using the pseudo potential representation for two different pseudo potentials. This expression is then applied to the calculation of the electrical resistivity $\Delta \varrho$ for vacancie...
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Personal Name(s):  Fischer, K. (Corresponding author) 

Contributing Institute: 
Publikationen vor 2000; PRE2000; Retrocat 
Imprint: 
Jülich
Kernforschungsanlage Jülich, Verlag
1963

Physical Description: 
p. 203550 
Document Type: 
Report Book 
Research Program: 
ohne Topic 
Series Title: 
Berichte der Kernforschungsanlage Jülich
167 
Link: 
OpenAccess OpenAccess 
Publikationsportal JuSER 
The transition probability for the scattering of conduction electrons at point defects in metals is calculated using the pseudo potential representation for two different pseudo potentials. This expression is then applied to the calculation of the electrical resistivity $\Delta \varrho$ for vacancies in Cu, Ag, and Au using the single orthogonalized plane wave (10PW) method. A screened Coulomb potential is taken as the defect potential, and the screening constant is determined by FRIEDEL's sum rule. The results for Cu, using the effective mass m* = m, are $\Delta \varrho$= 1.46 $\mu \Omega$cm/at.%, and $\Delta \varrho$ = 1.70 $\mu \Omega$cm/at.%. The use of m* = 1.4 m for Cu and m* = m for Ag and Au gives unreasonable values for il g, due to an attraction which is caused by the 1 s electrons in the pseudo potential, and not fully compensated by the defect potential. Using the 1PW method (i. e. no pseudo potential) and m* = m the results for Cu, Ag, and Au are 1.73 $\mu \Omega$cm/at.%, 2.07$\mu \Omega$cm/at.% and 2.11 $\mu \Omega$cm/at.o/o, respectively. 