This title appears in the Scientific Report :
2017
Please use the identifier:
http://dx.doi.org/10.1063/1.4984117 in citations.
Please use the identifier: http://hdl.handle.net/2128/16841 in citations.
Schottky barrier tuning via dopant segregation in NiGeSn-GeSn contacts
Schottky barrier tuning via dopant segregation in NiGeSn-GeSn contacts
We present a comprehensive study on the formation and tuning of the Schottky barrier of NiGeSn metallic alloys on Ge1-xSnx semiconductors. First, the Ni metallization of GeSn is investigated for a wide range of Sn contents (x = 0–0.125). Structural analysis reveals the existence of different poly-cr...
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Personal Name(s): | Schulte-Braucks, Christian (Corresponding author) |
---|---|
Hofmann, Emily / Glass, Stefan / von den Driesch, Nils / Mussler, Gregor / Breuer, Uwe / Hartmann, Jean-Michel / Zaumseil, Peter / Schröder, Thomas / Zhao, Qing-Tai / Mantl, Siegfried / Buca, Dan | |
Contributing Institute: |
Analytik; ZEA-3 Halbleiter-Nanoelektronik; PGI-9 |
Published in: | Journal of applied physics, 121 (2017) 20, S. 205705 - |
Imprint: |
Melville, NY
American Inst. of Physics
2017
|
DOI: |
10.1063/1.4984117 |
Document Type: |
Journal Article |
Research Program: |
Energy Efficient Tunnel FET Switches and Circuits Controlling Electron Charge-Based Phenomena |
Link: |
Published on 2017-05-31. Available in OpenAccess from 2018-05-31. Published on 2017-05-31. Available in OpenAccess from 2018-05-31. |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/16841 in citations.
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520 | |a We present a comprehensive study on the formation and tuning of the Schottky barrier of NiGeSn metallic alloys on Ge1-xSnx semiconductors. First, the Ni metallization of GeSn is investigated for a wide range of Sn contents (x = 0–0.125). Structural analysis reveals the existence of different poly-crystalline NiGeSn and Ni3(GeSn)5 phases depending on the Sn content. Electrical measurements confirm a low NiGeSn sheet resistance of 12 Ω/□ almost independent of the Sn content. We extracted from Schottky barrier height measurements in NiGeSn/GeSn/NiGeSn metal-semiconductor-metal diodes Schottky barriers for the holes below 0.15 eV. They decrease with the Sn content, thereby confirming NiGeSn as an ideal metal alloy for p-type contacts. Dopant segregation for both p- and n-type dopants is investigated as a technique to effectively modify the Schottky barrier of NiGeSn/GeSn contacts. Secondary ion mass spectroscopy is employed to analyze dopant segregation and reveal its dependence on both the Sn content and biaxial layer strain. | ||
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