This title appears in the Scientific Report :
2018
Please use the identifier:
http://hdl.handle.net/2128/19387 in citations.
Please use the identifier: http://dx.doi.org/10.1103/PhysRevB.95.161402 in citations.
Short-range atomic ordering in nonequilibrium silicon-germanium-tin semiconductors
Short-range atomic ordering in nonequilibrium silicon-germanium-tin semiconductors
The precise knowledge of the atomic order in monocrystalline alloys is fundamental to understand and predict their physical properties. With this perspective, we utilized laser-assisted atom probe tomography to investigate the three-dimensional distribution of atoms in nonequilibrium epitaxial Sn-ri...
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Personal Name(s): | Mukherjee, Santanu (Corresponding author) |
---|---|
Kodali, N. / Isheim, D. / Wirths, Stephan / Hartmann, J. M. / Buca, Dan Mihai / Seidman, D. N. / Moutanabbir, O. | |
Contributing Institute: |
JARA-FIT; JARA-FIT Halbleiter-Nanoelektronik; PGI-9 |
Published in: | Physical Review B Physical review / B, 95 95 (2017 2017) 16 16, S. 161402 161402 |
Imprint: |
Woodbury, NY
Inst.
2017
|
DOI: |
10.1103/PhysRevB.95.161402 |
Document Type: |
Journal Article |
Research Program: |
Controlling Electron Charge-Based Phenomena |
Link: |
OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://dx.doi.org/10.1103/PhysRevB.95.161402 in citations.
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520 | |a The precise knowledge of the atomic order in monocrystalline alloys is fundamental to understand and predict their physical properties. With this perspective, we utilized laser-assisted atom probe tomography to investigate the three-dimensional distribution of atoms in nonequilibrium epitaxial Sn-rich group-IV SiGeSn ternary semiconductors. Different atom probe statistical analysis tools including frequency distribution analysis, partial radial distribution functions, and nearest-neighbor analysis were employed in order to evaluate and compare the behavior of the three elements to their spatial distributions in an ideal solid solution. This atomistic-level analysis provided clear evidence of an unexpected repulsive interaction between Sn and Si leading to the deviation of Si atoms from the theoretical random distribution. This departure from an ideal solid solution is supported by first-principles calculations and attributed to the tendency of the system to reduce its mixing enthalpy throughout the layer-by-layer growth process. | ||
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