This title appears in the Scientific Report :
2018
Please use the identifier:
http://dx.doi.org/10.1109/IWJT.2018.8330309 in citations.
Gate stack and Ni(SiGeSn) metal contacts formation on low bandgap strained (Si)Ge(Sn) semiconductors
Gate stack and Ni(SiGeSn) metal contacts formation on low bandgap strained (Si)Ge(Sn) semiconductors
GeSn is a promising material to make the most of two worlds [1]: (i) its direct bandgap for high Sn contents yields high-mobility and decent optical properties; (ii) as a CMOS compatible material, it benefits from the maturity of group IV semiconductor ultra-large scale integration. However the bene...
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Personal Name(s): | Buca, D. (Corresponding author) |
---|---|
Schulte-Braucks, C. / von den Driesch, N. / Tiedemann, Andreas / Breuer, Uwe / Hartmann, J. M. / Zaumseil, P. / Mantl, S. / Zhao, Q. T. | |
Contributing Institute: |
Halbleiter-Nanoelektronik; PGI-9 JARA-FIT; JARA-FIT |
Published in: |
2018 18th International Workshop on Junction Technology (IWJT) : [Proceedings] - IEEE, 2018. - ISBN 978-1-5386-4511-6978-1-5386-4513-0 - doi:10.1109/IWJT.2018.8330309 |
Imprint: |
IEEE
2018
|
Physical Description: |
1-4 |
DOI: |
10.1109/IWJT.2018.8330309 |
Conference: | 2018 18th International Workshop on Junction Technology (IWJT), Shanghai (China), 2018-03-08 - 2018-03-09 |
Document Type: |
Contribution to a book Contribution to a conference proceedings |
Research Program: |
Controlling Electron Charge-Based Phenomena |
Publikationsportal JuSER |
GeSn is a promising material to make the most of two worlds [1]: (i) its direct bandgap for high Sn contents yields high-mobility and decent optical properties; (ii) as a CMOS compatible material, it benefits from the maturity of group IV semiconductor ultra-large scale integration. However the benefit of high carrier mobility in MOSFETs or direct bandgap in tunnel-FETs can only be used in combination with a high quality, scaled and low defective gate oxide and metallic contacts. In this work, we report on (i) the fabrication and characterization of MOS capacitors on high-Sn-content direct bandgap GeSn alloys and (ii) the formation of metallic contacts with low resistivity. We will also briefly discuss the Schottky barrier tuning by dopant segregation during Ni-stano-germanidation. |