This title appears in the Scientific Report :
2020
Please use the identifier:
http://dx.doi.org/10.1109/TED.2020.3001247 in citations.
Please use the identifier: http://hdl.handle.net/2128/25846 in citations.
Experimental Demonstration of Memristor-Aided Logic (MAGIC) Using Valence Change Memory (VCM)
Experimental Demonstration of Memristor-Aided Logic (MAGIC) Using Valence Change Memory (VCM)
Memristor-aided logic (MAGIC) is a technique for performing in-memory computing using memristive devices. The design of a MAGIC NOR gate has been described in detail, and it serves as the basic building block for several processing-in-memory architectures. However, the input stability of the MAGIC N...
Saved in:
Personal Name(s): | Hoffer, Barak (Corresponding author) |
---|---|
Rana, Vikas / Menzel, Stephan / Waser, Rainer / Kvatinsky, Shahar | |
Contributing Institute: |
JARA-FIT; JARA-FIT JARA Institut Green IT; PGI-10 Elektronische Materialien; PGI-7 |
Published in: | IEEE transactions on electron devices, 67 (2020) 8, S. 3115 - 3122 |
Imprint: |
New York, NY
IEEE
2020
|
DOI: |
10.1109/TED.2020.3001247 |
Document Type: |
Journal Article |
Research Program: |
Controlling Collective States |
Link: |
OpenAccess OpenAccess |
Publikationsportal JuSER |
Please use the identifier: http://hdl.handle.net/2128/25846 in citations.
Memristor-aided logic (MAGIC) is a technique for performing in-memory computing using memristive devices. The design of a MAGIC NOR gate has been described in detail, and it serves as the basic building block for several processing-in-memory architectures. However, the input stability of the MAGIC NOR gate forces a limitation on the threshold voltages: the magnitude of the set voltage must be higher than the magnitude of the reset voltage. Unfortunately, many of the current leading resistive switching technologies, particularly, valence change memory (VCM), have the opposite ratio between the threshold voltages. In this article, we experimentally demonstrate the undesirable effects of input instability. Furthermore, we introduce three new MAGIC gates for devices with low set-to-reset voltage ratios and experimentally demonstrate their robust operation using Pt/Ta 2 O 5 /W/Pt devices. The three gates, combined with constant values, are functionally complete and are demonstrated as building blocks for in-memory logic on VCM devices. |