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Gallium arsenide technology /
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Crystal growth of electronic materials. 5, 5 : Based on the lectures : International Summer School on Crystal Growth and Materials Research : ISSCG : Davos, 03.09.1983-10.09.1983.
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Kaldis, E.
1985
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Lightwave communications technology. A. Material growth technologies.
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Silicon processing for photovoltaics. 1.
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Gallium arsenide processing techniques /
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Neutron transmutation doping of semiconductor materials : Neutron transmutation doping conference 0004: proceedings : Gaithersburg, MD, 01.06.82-03.06.82 /
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Halbleiter. Teilbd C. Technologie von Si, Ge und SiC /
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Halbleiter Technologie.
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Ruge, I.
1984
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Halbleiter. Teilbd D. Technologie der III-V, II-VI und nicht tetraedrisch gebundenen Verbindungen /
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Baars, Jan
1984
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Crystal growth and characterization of polytype structures.
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Nuclear radiation detector materials : Materials Research Society annual meeting 1982 : Boston, MA, 11.82.
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Silicon processing : Symposium on silicon processing : San-Jose, CA, 19.01.82-22.01.82.
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Kristallisation aus Schmelzen : Eisenmetalle, Buntmetalle, Hochschmelzende Metalle, Halbleiterelemente, Edelmetalle, Radioaktive Elemente /
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II-VI compounds. 1982 : II-VI compounds : international conference. 0001 : Durham, 21.04.1982-23.04.1982.
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Hydrothermal chemistry of zeolites /
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Synthesis, crystal growth, and characterization : proceedings of the International School on Synthesis, Crystal Growth, and Characterization of Materials for Energy Conversion and Storage, October 12-23, (1981), National Physical Laboratory, New Delhi /
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Growth mechanisms and silicon nitride /
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Silicon: chemical etching.
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Preparation and analysis of protein crystals /
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Silicon.
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