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field effect transistor
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physical properties
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Polarization induced 2DEG in AlGaN/GaN HEMTs : on the origin, DC and transient characterization /
Vetury, Ramakrishna.
2000
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TBG
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Transistors
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Vetury, Ramakrishna.
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field effect transistor
physical properties
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FJLB - Physics of semiconductor devices
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TBG - Transistors
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