61
Silicon molecular beam epitaxy : International symposium on silicon molecular beam epitaxy 0004: proceedings : MRS spring meeting 1991 : Anaheim, CA, 29.04.91-03.05.91.
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Semiconductors. Group IV elements and III-V compounds /
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Defects in silicon 0002 : Symposium on defects in silicon 0002: proceedings : Meeting of the Electrochemical Society 1991 : Washington, DC, 05.05.91-10.05.91.
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Hydrogen in semiconductors.
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Untersuchungen zum Bridgman Verfahren am System Germanium : Gallium.
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Untersuchung von Interdiffusion, elastischer Gitterverzerrung und Relaxation in epitaktischen Si(1-x)Ge(x)/Silicon Heterostrukturen mit Ionenstreuung [E-Book] /
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Untersuchung von dünnen Silizidschichten auf Silizium mittels Elektronenspektroskopiemethoden [E-Book] /
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Halbleiterätzverfahren: Kinetik, Verfahrensgrundlagen und Anwendungsgebiete von nasschemischen Ätzverfahren für Silizium, Galliumarsenid, Galliumphosphid und Indiumphosphid.
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Loewe, H.
1990
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Crystal habit of CVD grown silicon in relation to adsorption processes.
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Materials issues in microcrystalline semiconductors : symposium held November 29-December 1, 1989, Boston, Massachusetts, U.S.A. /
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Handbook of semiconductor silicon technology /
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Diamond, silicon carbide and related wide bandgap semiconductors : Diamond, silicon carbide and related wide bandgap semiconductor: symposium : Boston, MA, 27.11.89-01.12.89.
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Pac Spektroskopie an Störstellen in Silizium.
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Bivalente Störstellen in Silizium, Germanium und Galliumarsenid.
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Roos, G.
1990
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Halbleiter. Teilband B. Störstellen und Defekte in Elementen der IV. Gruppe und III-V Verbindungen : Ergänzungen und Erweiterungen zu Band III/17 /
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Amorphous and crystalline silicon carbide . 2: recent developments : proceedings of the 2nd international conference : ICACSC 1988 : Santa Clara, CA, December 15 - 16, 1988 /
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Amorphous and crystalline silicon carbide and related materials : International conference on amorphous and crystalline silicon carbide and related materials. 0001: proceedings : ICACSC. 1987: proceedings : Washington, DC, 10.12.87-11.12.87.
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Semiconductor silicon crystal technology /
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Semiconductor silicon: materials science and technology : Summer school on silicon: materials science and technology: proceedings : International school of materials science and technology course 0016 : Erice, 03.07.88-15.07.88.
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Physical chemistry of, in and on silicon.
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