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TBG - Transistors
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FJLB - Physics of semiconductor devices
Print Edition
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TBG - Transistors
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FJLB - Physics of semiconductor devices
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1
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Bipolare Transistoren.
Schrenk, H.
1978
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2
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Feldeffekttransistoren.
Beneking, H.
1973
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3
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Operation and modeling of the MOS transistor /
Tsividis, Yannis.
1999
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Polarization induced 2DEG in AlGaN/GaN HEMTs : on the origin, DC and transient characterization /
Vetury, Ramakrishna.
2000
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Seltenerd-basierte ternäre Oxide als alternative Gatedielektrika /
Roeckerath, Jens Martin
2008
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Available as
Print Edition
Material Type
Book
5
Type of Literature
Handbook, Textbook
2
Theses
2
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ZB
4
IKP
2
Name
Beneking, H.
1
Roeckerath, Jens Martin
1
Schrenk, H.
1
Tsividis, Yannis.
1
Vetury, Ramakrishna.
1
Subject
MOS transistor
2
field effect transistor
2
semiconductor device
2
X-ray diffractometer
1
X-ray spectroscopy
1
compound semiconductor
1
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dielectric constant
1
dielectric material
1
dielectric properties
1
force microscopy
1
mathematical model
1
physical properties
1
rare earth compound
1
rare earth material
1
sputter deposition
1
transistor
1
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Classification
FJLB - Physics of semiconductor devices
TBG - Transistors
FJK - Specific semiconductor materials
1
Language
German
1
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