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Belyaev, A. E.
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Lüth, H.
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Vitusevich, Svetlana
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Belyaev, A. E.
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Lüth, H.
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Vitusevich, Svetlana
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1
Poster
Capacitance characterization of AlN/GaN double barrier resonant tunnelling diodes
Kurakin, A. M.
2005
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2
Poster
Hot carrier energy losses in conducting layers of AlGaN/GaN heterostructures grown on SiC and Al2O3 substrates
Danilchenko, B. A.
2005
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3
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Low-temperature transport in AlGaN/GaN 2D electron systems
Vitusevich, S. A.
2004
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4
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Energy spectrum of 2DEG in the field-effect-induced barrier structures controlled by magnetic field
Sheka, D. I.
2004
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5
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Subnanosecond kinetics study of 2D-hot carrier transport in GaN/AlGaN heterostructures
Danilchenko, B. A.
2004
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6
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Ultra-high electric field transport in GaN-based heterostructures
Vitusevich, S. A.
2003
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7
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Peculiarities of spectral responsivity of double-barrier resonant tunneling diodes
Vitusevich, S. A.
2000
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8
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Fine structure of photoresponse spectra in double-barrier resonant tunneling diode
Vitusevich, S. A.
2000
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Belyaev, A. E.
Danylyuk, S. V.
8
Lüth, H.
Vitusevich, Svetlana
Klein, N.
5
Danilchenko, B. A.
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Förster, A.
3
Kochelap, V. A.
3
Drok, E.
2
Kurakin, A. M.
2
Reetz, W.
2
Zelensky, S. E.
2
Avksentyev, A. Yu.
1
Budnik, A. P.
1
Chernyachuk, F. V.
1
Figielski, T.
1
Foxon, C. T.
1
Makosa, A.
1
Naumov, A. V.
1
Novikov, S. V.
1
Petrychuk, M. V.
1
Sheka, D. I.
1
Sokolov, V. N.
1
Zelenskyi, S. E.
1
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Research Program
Materialien, Prozesse und Bauelemente für die Mikro- und Nanoelektronik
6
Schichtsysteme und Bauelemente der Supraleiterelektronik
2
Contributing Institute
Institut für Bio- und Chemosensoren; ISG-2
6
Institut für Halbleiterschichten und Bauelemente; ISG-1
4
Center of Nanoelectronic Systems for Information Technology; CNI
2
Institut für Schicht- und Ionentechnik; ISI
2
Scientific Report
2004
3
2000
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2005
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