JuLib | Articles & more - {"JARA-FIT; JARA-FIT"}

1

Talk (non-conference)

Hole mobility enhancement of quantum-well p-MOSFETs on sSi/sSi0.5Ge0.5/sSOI heterostructure

Yu, W.
2012

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

2

Conference Presentation

Ultrathin epitaxial Ni-silicide contacs on Si and SiGe: Structural and electrical investigation

Zhao, Q.T.
2012

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

3

Contribution to a book
Contribution to a conference proceedings

Ultrathin epitaxial Ni-silicide contacts on Si and SiGe: Structural and electrical investigation

Zhao, Q.T.
2012

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

4

Contribution to a book
Contribution to a conference proceedings

Epitaxial growth and properties of NiSiGe

Zhang, B.
2012

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

5

Contribution to a book
Contribution to a conference proceedings

Hole mobility enhancement of quantum-well p-MOSFETs on sSi/sSi0.5 Ge0.5/sSOI heterostructure

Yu, W.
2012

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

6

Journal Article

Hole Mobilities of Si/Si0.5Ge0.5 Quantum-Well Transistor on SOI and Strained SOI

Yu, W.
2012

IEEE electron device letters, 33 (2012) S. 758 - 760

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

7

Journal Article

Electrical characterization of O-gated uniaxial tensile strained Si nanowire-array metal-oxide-semiconductor field effect transistors with <100> and <110> channel orientations

Habicht, S.
2012

Thin solid films, 520 (2012) S. 3332 - 3336

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

8

Journal Article

Impact of strain and Ge concentration on the performance pf planar SiGe band-to-band-tunneling transistors

Schmidt, M.
2012

Solid state electronics, 71 (2012) S. 42 - 47

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

9

Journal Article

Tunneling field-effect transistor with a strained Si channel and a Si0.5Ge0.5 source

Zhao, Q.T.
2012

Solid state electronics, 74 (2012) S. 97-101

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

10

Journal Article

Hole Transport in Strained Si0.5Ge0.5 QW-MOSFETs with <110> and <100> Channel Orientations

Minamisawa, R.A.
2012

IEEE electron device letters, 33 (2012) S. 1105 - 1107

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

11

Journal Article

p-Type Ion Implantation in Tensile Si/Compressive Si0.5Ge0.5/Tensile Strained Si Heterostructures

Minamisawa, R.A.
2012

Journal of the Electrochemical Society, 159 (2012) S. H44 - H51

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

12

Journal Article

LaLuO3 higher-k dielectric integration in SOI MOSFETs with a gate-first process

Nichau, A.
2012

Solid state electronics, 71 (2012) S. 19 - 24

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

13

Journal Article

Anisotropy of strain relaxation in (100) and (110) Si/SiGe heterostructures

Trinkaus, H.
2012

Journal of applied physics, 111 (2012) S. 014904

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”
Get full text Published under German "Allianz" Licensing conditions on 2012-01-05. Available in OpenAccess from 2012-01-05

14

Journal Article

Laser synthesis of germanium tin alloys on virtual germanium

Stefanov, S.
2012

Applied physics letters, 100 (2012) S. 104101

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”
Get full text Published under German "Allianz" Licensing conditions on 2012-03-06. Available in OpenAccess from 2012-03-06

15

Journal Article

Epitaxial growth of Ni(Al)Si0.7Ge0.3 on Si0.7Ge0.3/Si(100) by Al interlayer mediated epitaxy

Zhang, B.
2011

Applied physics letters, 98 (2011) S. 252101

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”
Get full text Published under German "Allianz" Licensing conditions on 2011-06-20. Available in OpenAccess from 2011-06-20

16

Contribution to a book
Contribution to a conference proceedings

Lanthanum Lutetium oxide integration in a gate-first process on SOI MOSFETs

Nichau, A.
2011

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

17

Contribution to a book
Contribution to a conference proceedings

Impact of strain and Ge concentration on the performance of planar SiGe band-to-band-tunneling transistors

Schmidt, M.
2011

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

18

Conference Presentation

Lanthanum Lutetium oxide integration in a gate-first process on SOI MOSFETs

Nichau, A.
2011

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

19

Conference Presentation

Impact of strain and Ge concentration on the performance of planar SiGe band-to-band-tunneling transistors

Schmidt, M.
2011

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

20

Contribution to a book
Contribution to a conference proceedings

Thermal Stability and Interface Improvement of Thin NiSiGe by C+ ion implantation

Zhang, B.
2011

“...JARA-FIT; JARA-FIT Jülich-Aachen Research Alliance - Fundamentals of Future Information Technology...”

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