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1
Glass, Stefan
2018
2018
Nanoelectronic Devices, 18 (2018) 1, S. 1
“...Controlling Electron Charge-Based Phenomena...”
2
Gate stack and Ni(SiGeSn) metal contacts formation on low bandgap strained (Si)Ge(Sn) semiconductors
Buca, D.
2018
2018
3
Journal of applied physics, 121 (2017) 20, S. 205705 -
“...Controlling Electron Charge-Based Phenomena...”Published on 2017-05-31. Available in OpenAccess from 2018-05-31. Published on 2017-05-31. Available in OpenAccess from 2018-05-31.
4
Glass, S.
2017
2017
Applied physics letters, 111 (2017) 26, S. 263504 -
“...Controlling Electron Charge-Based Phenomena...”Published on 2017-12-27. Available in OpenAccess from 2018-12-27.
5
Schulte-Braucks, C.
2017
2017
ACS applied materials & interfaces, 9 (2017) 10, S. 9102 - 9109
“...Controlling Electron Charge-Based Phenomena...”
6
Solid state electronics, 128 (2017) S. 54 - 59
“...Controlling Electron Charge-Based Phenomena...”
7
Blaeser, Sebastian
2016
2016
IEEE transactions on electron devices, 63 (2016) 11, S. 4173 - 4178
“...Controlling Electron Charge-Based Phenomena...”
8
9
Schulte-Braucks, C.
2016
2016
ACS applied materials & interfaces, 8 (2016) 20, S. 13133 - 13139
“...Controlling Electron Charge-Based Phenomena...”Restricted OpenAccess Restricted OpenAccess
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11