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High temperatures conductance characteristics of differently modified LaAlO3/SrTiO3-heterostructures

Gunkel, F.
2011

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Resistive switching in different forming states of Ti/Pr0.48Ca0.52MnO3 junctions

Park, C.
2011

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Simulation studies of ultra-nonlinear switching kinetics and scaling in oxide-based resistive switches

Menzel, S.
2011

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Scaling potential of local redox-processes in memristive SrTiO3 thin film devices

Dittmann, R.
2011

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Origin of the ultra-nonlinear switching kinetics in oxide-based resistive switches

Menzel, S.
2011

Advanced functional materials, 21 (2011) S. 4487 - 4492

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Spectroscopic study of the electric field induced valence change of Fe-defect centers in SrTiO(3)

Lenser, C.
2011

Physical Chemistry Chemical Physics, 13 (2011) S. 20779 - 20786

Get full text Published under German "Allianz" Licensing conditions on 2011-10-14. Available in OpenAccess from 2012-10-14

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Die kleinsten Bits der Welt

Waser, R.
2011

Spektrum der Wissenschaft, 1 (2011) S. 86 - 95

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Resistive switching characteristics and different forming states of Ti/Pr0.48Ca0.52MnO3 junctions

Park, C.
2011

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Electronic structure of epitaxial Fe-doped SrTiO3 thin films

Szade, J.
2011

Phase transitions, 84 (2011)

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Local conductivity of epitaxial Fe-doped SrTiO3 thin films

Kajewski, D.
2011

Phase transitions, 84 (2011)

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Coexistence of two different switching polarities in titanate thin film heterostructures

Dittmann, R.
2010

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Correlation between growth kinetics and nanoscale resistive switching properties of SrTiO3 thin films

Münstermann, R.
2010

Journal of applied physics, 108 (2010) S. 124504

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The role of defects in resistively switching chalcogenides

Waser, R.
2010

International journal of materials research, 101 (2010) S. 182 - 198

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Function by defects at the atomic scale - New concepts for non-volatile memories

Waser, R.
2010

Solid state electronics, 54 (2010) S. 830 - 840

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High temperature conductance characteristic of LaAlO3/SrTiO3-heterostructures under changing pO2

Gunkel, F.
2010

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Identification of A- and B-site cation vacancy defects in perovskite oxide thin films

Keeble, D.J.
2010

Physical review letters, 105 (2010) S. 226102

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38

Coexistence of filamentary and homogeneous switching in Fe-doped SrTiO3 thin film memristive devices

Münstermann, R.
2010

Advanced materials, 22 (2010) S. 4819 - 4822

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Reversible alternation between bipolar and unipolar resistive switching in polycrystalline barium strontium titanate thin films

Shen, Wan.
2010

Journal of applied physics, 107 (2010) S. 094506

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